Texas Instruments Corporation

Cavendish Kinetics Limited

Qorvo Us, Inc.

Richard Lee Knipe

Robertus Petrus Van Kampen

Roberto Gaddi

James D Huffman

Anartz Unamuno

Charles Gordon Smith

Vikram Joshi

Lance W Barron

Mickael Renault

Rabah Mezenner

Mark Henry Strumpell

Cong Quoc Khieu

Thomas Allan Kocian

Patrick Ian Oden

Anthony DiCarlo

Douglas A Webb

Shibajyoti Ghosh Dastider

Jacques Marcel Muyango

Robert E Meier

Thomas W Orent

Hidekazu Yoshihara

Larry J Hornbeck

Lionel S White, Jr

John H Tregilgas

Duane E Carter

Frank Joseph Poradish

Michael A Mignardi

Rashed Mahameed

Thomas L Maguire

Peter F vanKessel

Toshiyuki Nagata

William D Bracken

David D Ratcliff

David L Amil

Robert W Coburn

Gregory G Mooty

Daniel W Stanley

Kenneth L Taylor

Steven S Stresau

Elliott Keith Carpenter

John Harold Tregilgas

Grady L Endsley

Willibrordus Gerardus Van Den Hoek

James Douglas Huffman

Jaques Marcel Muyango

Charles G Smith

Willibrordus Gerardus Maria Van Den Hoek

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductors. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Stable landing above RF conductor in MEMS device

A method of forming a microelectromechanical device is disclosed wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Flexible MEMS device having hinged sections

The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.

MEMS RF-switch with near-zero impact landing

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Method of forming a flexible MEMS device

The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points.

Thermal management in high power RF MEMS switches

The present disclosure generally relates to a MEMS device for reducing ESD. A contacting switch is used to ensure that there is a closed electrical contact between two electrodes even if there is no applied bias voltage.

Naturally closed MEMs switch for ESD protection

The present invention generally relates to a mechanism for making the anchor of the MEMS switch more robust for current handling. The disclosure includes a modified leg and anchor design that allows for larger currents to be handled by the MEMS switch.

Current handling in legs and anchors of RF-switch

The present invention generally relates to a MEMS DVC utilizing one or more MIM capacitors. The MIM capacitor may be disposed between the MEMS device and the RF pad or the MIM capacitor may be integrated into the MEMS device itself. The MIM capacitor ensures that a low resistance for the MEMS DVC is achieved.

DVC utilizing MEMS resistive switches and MIM capacitors

A MEMS switch contains an RF electrode, pull-down electrodesand anchor electrodeslocated on a substrate. A plurality of islandsare provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contactto which the MEMS-bridgeforms an ohmic contact in the pulled-down state. The pull-down electrodesare covered with a dielectric layerto avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppersare disposed on the dielectric layerat locations corresponding to the islands, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layeror disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.

MEMS RF-switch with controlled contact landing

The present invention generally relates to a MEMS device having a plurality of cantilevers that are coupled together in an anchor region and/or by legs that are coupled in a center area of the cantilever. The legs ensure that each cantilever can move/release from above the RF electrode at the same voltage. The anchor region coupling matches the mechanical stiffness in all sections of the cantilever so that all of the cantilevers move together.

Merged legs and semi-flexible anchoring having cantilevers for MEMS device

The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.

DVC utilizing MIMS in the anchor

The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.

Method and technique to control MEMS DVC control waveform for lifetime enhancement

The present invention generally relates to a MEMS digital variable capacitor (DVC) () and a method for manufacture thereof. The movable plate () within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer () that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.

Stress control during processing of a MEMS digital variable capacitor (DVC)

The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.

Curved RF electrode for improved Cmax

Embodiments of the present invention generally relate to a MEMS device that is anchored using the layer that is deposited to form the cavity sealing layer and/or with the layer that is deposited to form the pull-off electrode. The switching element of the MEMS device will have a flexible or movable portion and will also have a fixed or anchor portion that is electrically coupled to ground. The layer that is used to seal the cavity in which the switching element is disposed can also be coupled to the fixed or anchor portion of the switching element to anchor the fixed or anchor portion within the cavity. Additionally, the layer that is used to form one of the electrodes may be used to provide additional leverage for anchoring the fixed or anchor portion within the cavity. In either situation, the movement of the flexible or movable portion is not hindered.

MEMS device anchoring

Growing community of inventors

McKinney, TX, United States of America

Richard Lee Knipe