Hewlett-Packard Development Company, L.p.

Hewlett-Packard Company

Other

Samsung Electronics Co., Ltd.

Seagate Technology Incorporated

Richard Lee Hilton

Kenneth Kay Smith

Frederick A Perner

Donald J Fasen

Robert G Mejia

Corbin L Champion

Kenneth James Eldredge

Curt Nelson Van Lydegraf

Tracy Ann Sauerwein

Thomas C Anthony

Lung T Tran

Charles D Smith

Anthony Peter Holden

Steven C Johnson

Michael Clinton Allyn

David H McIntyre

Samuel H Gailbreath

Boyd N Shelton

Curt Van Lydegraf

Tasha Tasavida Zahnd

Richard B Wells

Frederick A Pemer

Donald Abel

Craig Raese

Chester G Haibel, Jr

John Craig Raese

A system comprising a host processor and a raster image processor (RIP). The host processor is to determine whether each page in a multi-page document contains color, partition a print job into a plurality of print sub-jobs, and determine a separate configuration for the RIP for each print sub-job.

Raster image processor configuration determination based on per page color determination

A data storage device includes a first read mechanism, a second read mechanism, and a data storage medium movable with respect to the first read mechanism and the second read mechanism. A first reference patch containing reference bits is positioned near a first corner of the data storage medium. The first read mechanism is configured to read the reference bits of the first reference patch and the second read mechanism is configured to read the reference bits of a second reference patch. The storage device also includes a controller configured to determine whether the first read mechanism and the data storage medium are offset with respect to each other based upon the reference bits read by the first read mechanism and the reference bits read by the second mechanism.

Data storage device

A memory system comprises a plurality of memory storage elements, an address sparing module coupled to the plurality of memory storage elements and operable to map first addresses of first predetermined memory locations to second addresses of second predetermined memory locations, and an ECC (error correcting cod) combinatorial logic circuit coupled to the plurality of memory storage elements and operable to detect and correct errors in data read from the plurality of memory storage elements in less than three clock cycles.

Assisted memory system

A method for printing with a laser printer includes obtaining data representative of the bow and tilt characteristics of the printer. Data representing an image to be printed is loaded and analyzed. A control signal is determined from the image data and modified based on the known bow and tilt characteristics of this printer, such that the printed image is free of bow and tilt.

Laser jet bow/tilt correction

A read/write arrangement for a contact probe storage arrangement or the like, has a cantilever disposed with a medium which is movable relative to the cantilever. A device which is associated with one of the cantilever and the medium is configured to be responsive to changes in electrical field between the medium and the cantilever caused by a change in distance between the medium and the cantilever. A heater is disposed on the cantilever for heating the medium and for inducing localized topographical changes which represent bits of data. A circuit electrically interconnects both of the device and the heater.

Contact probe storage FET sensor and write heater arrangements

Methods and apparatuses are disclosed for measuring values of a plurality of memory elements, where the measured values may be indicative of the digital state of a memory element. Calculations may be performed on a plurality of transition-terms associated with the possible transitions in the values between proximate memory elements. The digital state of memory elements may be determined using the calculations performed on the plurality of transition-terms.

Methods and apparatuses for determining the state of a memory element

A read/write arrangement for a contact probe storage arrangement or the like, has a cantilever disposed with a medium which is movable relative to the cantilever; a device associated with one of the cantilever and the medium which is configured to be responsive to changes in electrical field between the medium and the cantilever caused by a change in distance between the medium and the cantilever; a heater disposed on the cantilever for heating the medium and for inducing localized topographical changes which represent bits of data; and a circuit which electrically interconnects both of the device and the heater.

Contact probe storage fet sensor and write heater arrangements

A method of storing data in a storage device having a probe to form perturbations in a storage medium of the storage device includes receiving input write data bits and encoding the input write data bits to form coded write data bits. Perturbations are formed in the storage medium by contacting a probe to the storage medium, the perturbations corresponding to the coded write data bits, wherein the coded write data bits provide a generally uniform distribution of the perturbations on the storage medium.

Reducing variations in density of perturbations on a storage medium

A parallel data storage device includes a data storage medium having a first cluster and a second cluster. The first cluster includes a first patch and the second cluster includes a second patch. The parallel data storage device also includes a first reader for reading the first patch of the first cluster and a second reader for reading the second patch of the second cluster. A first multiplexer is used for addressing the first cluster while a second multiplexer is used for addressing the second cluster. The first and second readers are arranged in a single column such that the first reader is electrically connected to the first multiplexer and the second reader is electrically connected to the second multiplexer.

Parallel data storage device

A method for determining memory element values may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory element, and measuring a second current provided to the column of interest.

System and method for determining the value of a memory element

A storage device includes a probe and a storage medium having a plurality of storage cells. The probe is able to form a first structure and a second structure in the storage medium, where a first storage cell containing a transition between the first structure and a second structure contains a data bit having a first state, and where a second storage cell not including a transition between the first structure and the second structure contains a data bit having a second state.

Storage device having a probe to form structures for representing data states

A storage device includes a probe and a storage medium, where the probe is adapted to form perturbations in the storage medium. A read circuit detects a storage state, with the read circuit to receive a first signal representing interaction between the probe and the storage medium. The read circuit derives a second signal based on the first signal, the second signal being a second derivative of the first signal. The read circuit is adapted to detect the storage state based on the second signal.

Storage device having a read circuit to detect a storage state based on interaction between a probe and a storage medium

A nano-scale tip for use on a probe includes a first width and a second width. The first width of the tip is greater than the second width and the varying sized widths form a substantially elliptical shape.

Elliptical-shaped nano-scale tip

A logical data block in a MRAM is disclosed. The logical data block comprises magnetic memory cells formed at intersections of hard-axis generating conductors and an easy-axis generating conductor. The logical data block may further be configured in size by a preselected, block-based error correction code. A magnetic memory module and computer system including a MRAM having a logical data block according to embodiments of the present invention are also disclosed. Additionally, a method embodiment of reducing half-select write errors within a MRAM is disclosed.

Logical data block, magnetic random access memory, memory module, computer system and method

A storage device includes a storage medium and a probe to form perturbations in the storage medium. The storage device further includes a circuit to cause heating of the probe to perform an access operation, the circuit to compensate for variations in a temperature of the probe in performing the access operation.

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Boise, ID, United States of America

Richard Lee Hilton