Fairchild Semiconductor Corporation

Extreme Devices Incorporated

Richard L Woodin

Christopher Lawrence Rexer

William F Seng

Joseph Andrew Yedinak

Chongman Yun

Martin E Kordesch

Howard D Bartlow

Carl Anthony Witt

Kwanghoon Oh

Praveen Muralheedaran Shenoy

Gary M Dolny

Praveen Muraleedharan Shenoy

Randolph D Schueller

Keith D Jamison

Donald E Patterson

Charlie Hong

David F Hebert

Joseph Shovlin

An electrical device on a single semiconductor substrate includes: an open base vertical PNP transistor placed in parallel with a wide bandgap, high voltage diode wherein the PNP transistor has a P doped collector region, an N-doped base layer, an N doped buffer layer, and a P doped emitter layer.

Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device

A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the device. A first region of a second conductivity type is in the upper surface of the epitaxial layer with a connection to a second electrode of the device. A second region of the first conductivity type lies below the first region and has a dopant concentration greater than the dopant concentration in the epitaxial layer.

Rugged semiconductor device architecture

Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the same conductivity type through an opening in a compound semiconductor material of the opposite conductivity type. Another embodiment discloses a transistor including multiple compound semiconductor layers where a highly doped compound semiconductor material is electrically connected to a compound semiconductor layer of the same conductivity type through an opening in a compound semiconductor layer of the opposite conductivity type. Embodiments further include metal contacts electrically connected to the highly doped compound semiconductor material. A substantially planar semiconductor device is disclosed. In embodiments, the compound semiconductor material may be silicon carbide.

Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes, or a PNP transistor, across the blocking junction of the wide bandgap device.

Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the, same conductivity type through an opening in a compound semiconductor material of the opposite conductivity type. Another embodiment discloses a transistor including multiple compound semiconductor layers where a highly doped compound semiconductor material is electrically connected to a compound semiconductor layer of the same conductivity type through an opening in a compound semiconductor layer of the opposite conductivity type. Embodiments further include metal contacts electrically connected to the highly doped compound semiconductor material. A substantially planar semiconductor device is disclosed. In embodiments, the compound semiconductor material may be silicon carbide.

A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contactis thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

Method and device with durable contact on silicon carbide

A wide bandgap device in parallel with a device having a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device.

A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap material may comprise silicon carbide and a low melting point contact material may comprise aluminum. In another embodiment a substantially uniform ohmic contact may be formed between a contact material and a semiconductor material by annealing the contact at a temperature less than the melting point of the contact material. In an embodiment, the contact may be annealed for more than five hours.

Uniform contact

A field emitter ( ) having improved electron emission properties is provided. Electron-emitting microtip protrusions ( ) in an emitter layer ( ) are separated from a dielectric layer ( ) by an interlayer ( ) that prevents substantial mixing of the dielectric ( ) and the emitter layer ( ) during growth of the dielectric layer ( ). A conductive gate electrode layer ( ) is deposited on the dielectric layer ( ). For carbon-based emitters, aluminum is one of several suitable interlayers between the carbon layer and a silicon dioxide dielectric layer.

Growing community of inventors

North Yarmouth, ME, United States of America

Richard L Woodin