US Government As Represented by the Secretary of the Army

The State University of New York

Maxion Technologies, Inc.

University of Texas System

Richard L Tober

John D Bruno

Serge Luryi

Gregory L Belenky

Mikhail V Kisin

Sergey Suchalkin

Leon Shterengas

John T Pham

Mikhail A Belkin

Stephen R McFarlane

A protective device for an imager which is contained within a housing and in which the imager is aligned with an opening in the housing. The protective device includes a cover which overlies the housing opening and is manually detachably secured to the housing by three or more resilient clips. A plurality of openings are formed through the cover to enable operation of the imager.

Protective device for an imager

The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.

Quantum cascade lasers with electrically tunable emission wavelengths

A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

Semiconductor light source with electrically tunable emission wavelength

Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated metal layer, a heat sink, a bonding layer adjacent to the heat sink, and a second metal layer in between the substrate and the heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region.

Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers

An optoelectronic device comprises a detector, an emitter and a modulator corporated into a single semiconductor chip. The optoelectronic device provides electrical isolation and optical interconnection (via waveguides) of the components of the semiconductor chip. Contacts for providing forward and reverse bias voltages are included in the device. The optoelectronic device is fabricated by growing a strained-layer quantum diode structure to produce a piezoelectric field in a quantum well, electrically isolating portions of the structure, and optically interconnecting portions of the structure. The fabrication is carried out by using an implant process or an etching process, and without having to use either regrowth techniques or packaging together of multiple optical elements.

Single-chip, multi-functional optoelectronic device and method for

A spectroscopy characterization module having a particular configuration includes a light tight housing that accepts monochromatic radiation through a first optical port and optically chopped coherent radiation through a second optical port. A material sample is held on a sample mount within the housing according to the spectroscopy characterization technique to be used. A rotatable detector mount enclosed within the housing positions a detector in different positions depending on the measurement being performed. A first one-to-one image forming mirror focuses monochromatic radiation passing through the first optical port onto the material sample. A lens focuses optically chopped radiation passing through the second optical port onto the material sample. A second one-to-one image forming mirror focuses radiation transmitted through the sample onto the detector in a first position while a third one-to-one image forming mirror focuses radiation reflected off the sample onto the detector in a second position. Various spectroscopic measurements can be performed on the material sample by merely using different sample mounts without changing the configuration of the characterization module.

Growing community of inventors

Elkridge, MD, United States of America

Richard L Tober