USA As Represented by Secretary of the Navy

The University of Akron

Richard L Henry

Mark E Twigg

Daniel D Koleske

Ronald T Holm

Alma E Wickenden

Charles R Eddy, Jr

Martin C Peckerar

Boris N Feigelson

David Kurt Gaskill

Nathan F Cardarelli

Mohammad Fatemi

Alan D Berry

Edward J Cukauskas

Alan N Gent

William B Mercer

Raphael Kaplan

This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (LiN) combined with barium fluoride (BaF), or lithium nitride combined with barium fluoride and lithium fluoride (LiF) composition, heating the solvent to render it molten, dissolution of the source of GaN material in the molten solvent and following precipitation of GaN single crystals either self seeded or on the seed, maintaining conditions and then precipitating out.

Method of growing group III nitride crystals

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

Technique for perfecting the active regions of wide bandgap semiconductor nitride devices

This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1-10 micron thick semiconducting film disposed on the nucleating layer.

Electronic devices grown on off-axis sapphire substrate

A CVD process for forming a layer or layers of superconducting materials on a semiconductor substrate in which volatile organometallic compounds of bismuth, strontium, calcium and copper are heated in the presence of a carrier gas in a first chamber free of hydrolyzing agents. Under conditions free of hydrolyzing agents, the carrier gas transports a predetermined quantity of the volatile organometallic compounds of the bismuth, strontium, calcium and copper to a deposition chamber. The compounds are decomposed and deposit mixed oxides on the substrate. Subsequent to deposition of the mixed oxides of the desired elements the layer is sintered in an oxygen-rich atmosphere, and formed into a superconducting film by subsequent slow cooling still in an oxygen-rich atmosphere.

Formation of superconducting Bi-Sr-Ca-Cu-O films by organometallic

A device for mixing liquids, solids or combinations thereof, particularly viscous liquids and polymeric solids comprises a mixing vessel having therein a substantially cylindrical mixing chamber; a rotor with a cross-section in the shape of a convex-convex lens having outer convex surfaces substantially identical in shape to the inner wall surface of the cylindrical mixing chamber and with a longitudinal dimension substantially identical to that of said cylindrical mixing chamber, the rotor being variably positionable so it's rotating axis is parallel to the axis of the mixing chamber, but eccentric thereto, and mounted within the mixing chamber upon a base having a drive mechanism for the rotor disposed through it; and a lid for tightly sealing the chamber formed by the mixing vessel and the base. The rotor preferably fills from 28 to 100% of the volume of the mixing chamber; most preferably 50 to 75%. The rotor may be heliciform along its longitudinal axis.

Eccentric mounted rotor for mixing solids and liquid in a chamber

An apparatus and method for the elimination of marine fouling of marine mechanisms such as underwater fluid distribution emission systems. A grommet nozzle made of plastic materials containing an antifoulant and having a capability of easy installation forms a basic part of the apparatus. The grommet nozzle of the invention is formed of a polymer or a mixture of polymers containing a material toxic to calcareous marine organisms and capable of release of the toxic material into the environment at such a rate that the marine organisms grow extremely slow, yet the release rate is not sufficiently fast to be a toxic hazard to the surrounding environment.

Growing community of inventors

Great Falls, VA, United States of America

Richard L Henry