Asml Netherlands B.v.

Asml Holding N.v.

Richard Joseph Bruls

Hans Jansen

Erik Roelof Loopstra

Herman Boom

Johannes Jacobus Matheus Baselmans

Sjoerd Nicolaas Lambertus Donders

Johannes Catharinus Hubertus Mulkens

Christiaan Alexander Hoogendam

Bob Streefkerk

Jeroen Johannes Sophia Maria Mertens

Timotheus Franciscus Sengers

Marcel Mathijs Theodore Marie Dierichs

Sergei Shulepov

Ronald Walther Jeanne Severijns

Paul Janssen

Bauke Jansen

Matthew Lipson

Tammo Uitterdijk

Marcio Alexandre Cano Miranda

Ivo Adam Johannes Thomas

Gheorghe Tanasa

Siebe Landheer

Erik Petrus Buurman

Jeroen Peter Johannes Bruijstens

Robertus Cornelis Martinus De Kruif

Arnout Johannes Meester

Laurentius Catrinus Jorritsma

Maurice Martinus Johannes Van Der Lee

Johannes Wilhelmus Maria Cornelis Teeuwsen

Martinus Hendrikus Antonius Leenders

Johannes Henricus Wilhelmus Jacobs

Johannes Hubertus Josephina Moors

Frits Van Der Meulen

Stephen Roux

Peter Conrad Kochersperger

Joseph Harry Lyons

Yang-Shan Huang

Derk Servatius Gertruda Brouns

Kornelis Tijmen Hoekerd

Ronald Van Der Wilk

Robert Gabriël Maria Lansbergen

Matthias Kruizinga

Jorge Alberto Vieyra Salas

Erik Willem Bogaart

Jeroen Dekkers

Beatrijs Louise Marie-Joseph Katrien Verbrugge

Marc Hauptmann

Gerrit Van Den Bosch

Ronald Peter Albright

Maarten Mathijs Marinus Jansen

Sandra Van Der Graaf

Jérôme François Sylvain Virgile Van Loo

Mohammad Reza Kamali

Jorge Manuel Azeredo Lima

Marc Bruijn

Ronald Harm Gunther Kramer

Dylan John David Davies

Vadim Yevgenyevich Banine

Marcus Adrianus Van De Kerkhof

Marco Koert Stavenga

Andrei Mikhailovich Yakunin

Paulus Martinus Maria Liebregts

Gerardus Hubertus Petrus Maria Swinkels

Han-Kwang Nienhuys

Andrey Alexandrovich Nikipelov

Antonius Johannus Van Der Net

Dzmitry Labetski

Olav Waldemar Vladimir Frijns

Hendrikus Gijsbertus Schimmel

Antonius Theodorus Wilhelmus Kempen

Marcel Koenraad Marie Baggen

Youri Johannes Laurentius Maria Van Dommelen

Johannes Christiaan Maria Jasper

Anthonie Kuijper

Luigi Scaccabarozzi

Johannes Wilhelmus De Klerk

Jan Cornelis Van Der Hoeven

Hendrik Antony Johannes Neerhof

Willem Richard Pongers

Pieter Jacob Kramer

Gert-Jan Gerardus Johannes Thomas Brands

Edwin Te Sligte

Thomas Josephus Maria Castenmiller

Gerardus Carolus Johannus Hofmans

Rudy Jan Maria Pellens

Manish Ranjan

Zhuangxiong Huang

Wilbert Jan Mestrom

Joseph Laganza

Arjan Hubrecht Josef Anna Martens

Victor Antonio Perez-Falcon

Marcus Johannes Van Der Zanden

Albert Johannes Maria Jansen

Coen Cornelis Wilhelmus Verspaget

Jacob Brinkert

Thomas Leo Maria Hoogenboom

Hendrikus Alphonsus Ludovicus Van Dijck

Raymond Laurentius Johannes Schrijver

David Lucien Anstotz

Kursat Bal

An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.

Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris

Methods and systems are described for reducing particles in the vicinity of an electrostatic chuck () in which a cleaning reticle or substrate () is secured to the chuck, the cleaning reticle or substrate having surfaces partially devoid of conductive material so that an electric field from the chuck can pass through to a volume adjacent the substrate to draw particles () in the volume to the surface of the substrate. Voltage supplied to the chuck may have an alternating polarity to enhance the attraction of particles to the surface.

Apparatus for and method of in-situ particle removal in a lithography apparatus

A lithographic apparatus that includes an illumination system that conditions a radiation beam, a first stationary plate having a first surface, and a reticle stage defining, along with the first stationary plate, a first chamber. The reticle stage supports a reticle in the first chamber, and the reticle stage includes a first surface spaced apart from a second surface of the first stationary plate, thereby defining a first gap configured to suppress an amount of contamination passing from a second chamber to the first chamber. The first stationary plate is between the reticle stage and both the illumination system and a projection system configured to project a pattern imparted to the radiation beam by the patterning device onto a substrate.

Particle suppression systems and methods

A mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount is configured to suspend the pellicle frame relative to the patterning device such that there is a gap between the pellicle frame and the patterning device; and wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.

Mask assembly

A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors within a lithographic apparatus, and/or a separate metrology tool. Other inspection tools perform substrate backside inspection to produce second measurement data. A high-resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map is used to identify potentially relevant clusters of defects in the more detailed original defect map. The responsible apparatus can be identified by pattern recognition as part of an automated root cause analysis. Alternatively, reticle inspection data may be used as second measurement data.

Methods and apparatus for obtaining diagnostic information relating to a lithographic manufacturing process

A lithographic apparatus is disclosed that includes a projection system, and a liquid confinement structure configured to at least partly confine immersion liquid to an immersion space defined by the projection system, the liquid confinement structure and a substrate and/or substrate table. Measures are taken in the lithographic apparatus, for example, to reduce the effect of droplets on the final element of the projection system or to substantially avoid such droplet formation.

Lithographic apparatus and a method of operating the apparatus

An immersion lithographic projection apparatus is disclosed in which liquid is provided between a projection system of the apparatus and a substrate. The use of both liquidphobic and liquidphilic layers on various elements of the apparatus is provided to help prevent formation of bubbles in the liquid and to help reduce residue on the elements after being in contact with the liquid.

Lithographic apparatus and device manufacturing method

Method and apparatus for obtaining diagnostic information relating to a lithographic manufacturing process, lithographic processing system including diagnostic apparatus

A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.

Radiation source, lithographic apparatus device manufacturing method, sensor system and sensing method

A lithographic apparatus includes a first object holder and a second object holder. The first object holder is arranged to hold an object at a holder-facing surface. The object has the holder-facing surface. The second object holder is arranged to hold the object at the holder-facing surface. The lithographic apparatus is arranged to deform a contaminating particle at the holder-facing surface more when the object is held at the second object holder than when the object is held at the first object holder.

Lithographic apparatus, device manufacturing method and method of clamping an object

A CD-pitch dependency for a lithographic pattern printing process is related to the spectral intensity distribution of radiation used for projecting the pattern. A CD-pitch dependency can vary from one system to another. This can result in an iso-dense bias mismatch between systems. The invention addresses this problem by providing a lithographic apparatus including an illumination system for providing a projection beam of radiation, a projection system for projecting a patterned beam onto a target portion of a substrate, and a substrate table for holding the substrate, with a controller to provide an adjustment of the spectral distribution of radiant intensity of the projection beam. The adjustment of the spectral intensity distribution is based on data relating to an iso dense bias, and comprises a broadening of the spectral bandwidth or a change of shape of the spectral intensity distribution.

Lithographic apparatus, excimer laser and device manufacturing method

A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.

Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing a device

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Eindhoven, Netherlands

Richard Joseph Bruls