Lsi Corporation

Avago Technologies General IP (singapore) Pte. Ltd.

Lsi Logic Corporation

Richard John Stephani

Donald Albert Evans

Gordon W Priebe

Rasoju Veerabadra Chary

Travis Reynold Hebig

Ankur Goel

Bijan Kumar Ghosh

Myron Buer

Daniel Mark Nelson

Dennis E Dudeck

Ronald James Wozniak

Carl A Monzel

Dharmendra Kumar Rai

Max M Yeung

Miguel A Vilchis

David B Grover

Jeffrey Charles Herbert

Christopher David Sonnek

Ronald Brian Steele

Amy R Rittenhouse

Write assist circuitry is disclosed to assist a memory device in changing logical states during a write operation. The write assist circuit includes write assist circuits which can be coupled to a shared boost capacitor to provide write assistance to the memory device. The write assist circuit includes boost switch circuit to selectively couple one or more of the write assist circuits and the shared boost capacitor. The one or more write assist circuits, when coupled to the shared capacitor, provide negative bitline assistance by selectively driving one of its corresponding bitlines pairs to be negative during a write operation.

Method and apparatus for selective write assist using shared boost capacitor

A high-bandwidth multiple-read memory device includes multiple memory blocks, multiple address input buses, and a number of output data buses. The memory blocks include an auxiliary memory block and each memory block include several memory sub-blocks including an auxiliary memory sub-block. The output data buses output data corresponding to addresses corresponding to the address input buses during a multiple-read operation. The addresses correspond to a single memory sub-block of the memory sub-blocks of a memory block. Also described is differential XOR circuit that includes a selection logic circuit, a precharger circuit, and a multiplexer. The selection logic circuit provides a complementary output signal corresponding to a single-ended input signal. The multiplexer provides, during an evaluate phase, a differential output signal.

High bandwidth memory and glitch-less differential XOR

An apparatus having a first circuit and a second circuit. The first circuit may be configured to (i) parse a first data word into a first data portion and a second data portion and (ii) parse a first address into a first address portion and a second address portion. The second circuit generally has a plurality of memory blocks. The second circuit may be configured to store the second data portion in a particular one of the memory blocks using (i) the first data portion to determine the particular memory block and (ii) the first address portion to determine a particular one of a plurality of locations within the particular memory block. The data portion may not be stored in the memory blocks. The particular location may be determined independently of the second address portion.

Content addressable memory data clustering block architecture

A memory tracking circuit activates a reset signal that resets a word-line pulse generator to switch the memory from an access state to a recess state. Activation is based on (i) a signal received at the far end of a tracking row after a propagation delay and (ii) a signal applied to a transistor-based gate delay. If the memory is in a fast PVT condition such that the gate delay is of less duration than, or substantially equal to, the propagation delay, then a slow-down circuit delays activation of the reset signal to allow sufficient access margin. The delay in the latter case is less than that in the former case. If the memory is in a slow PVT condition such that the gate delay is longer than the propagation delay, then the slow-down circuit does not delay activation of the reset signal to prevent excess access margin.

Adjusting access times to memory cells based on characterized word-line delay and gate delay

A memory tracking circuit controls discharge duration of a tracking bit-line based on (i) a signal received at the far end of a tracking row after a propagation delay and (ii) a signal applied to a transistor-based gate delay. The tracking circuit (i) extends the discharge duration when one or more of (a) the propagation delay and (b) the transistor-based gate delay is shorter than an uncontrolled discharge duration of the tracking bit-line, and (ii) does not extend the discharge duration otherwise. Based on the discharge duration, the tracking circuit activates a reset signal that resets a clock-pulse generator to switch the memory from an access operation to a recess state. Controlling the discharge duration, and consequently the reset signal, based on the propagation delay and the gate delay allows the clock-pulse generator to adjust access times to account for the memory array configuration and process, temperature, and voltage conditions.

Adjusting bit-line discharge time in memory arrays based on characterized word-line delay and gate delay

A memory array is divided into multiple segments, each segment having one or more rows of bitcells. Each segment has control circuitry that controls whether the segment is in an active mode or a power-saving, sleep mode. The control circuitry ensures that a segment transitions from sleep mode to active mode before a row of the segment is accessed by driving a corresponding wordline high. The control circuitry also ensures that, at the end of a row access, the wordline is driven low before the corresponding segment is transitioned from active mode to sleep mode.

Segmented memory having power-saving mode

An apparatus having a first circuit and a second circuit. The first circuit may be configured to generate an output signal in response to (i) an intermediate signal, and (ii) a clock signal. The second circuit may be configured to generate the intermediate signal and a digital complement of the output signal in response to (i) an input signal and (ii) the clock signal. The intermediate signal may form a feedback to ensure the output signal and the digital complement of the output signal are in complementary states during a power up.

Split decode latch with shared feedback

A memory device comprises a memory block, a power gating transistor, and control circuitry. The memory block includes at least one memory cell comprising a storage element electrically connected to a source potential line, a drive strength of the storage element being a function of a voltage level on the source potential line. The power gating transistor, in turn, is connected between the source potential line and a voltage source. The control circuitry is operative to configure the power gating transistor to electrically connect the source potential line to the voltage source while the memory block is in a first mode, and to clamp the source potential line at a voltage different from that of the voltage source when the memory block is in a second mode.

Memory device with area efficient power gating circuitry

An apparatus comprising a memory array and a plurality of processing circuits. The memory array may be configured to store a plurality of data bits in a plurality of rows and a plurality of columns. A plurality of data words may be stored in a respective plurality of the columns. The plurality of processing circuits may each be configured to compare (i) a test bit of a plurality of bits of an input data word with (ii) a test bit of one of the plurality of columns to determine a match. The compare may occur on a first clock cycle of an input clock signal. Each of the plurality of processing circuits may be configured to power down a respective column of the memory array if the test bit of the input data word does not match the test bit of the column.

Low power SRAM based content addressable memory

A ROM-based multiple match system and method for producing a match signal in an addressable memory system are described. In various embodiments of the present invention, a ROM is used to generate single match and multiple match signals, as well as encoded address signals indicating a matching location(s) within the memory. The ROM is provided with specific entries in the form of a lookup table, which are used to signal combinational logic that provides an output to the system. In certain embodiments of the invention, the ROM may be divided into hierarchical sub-blocks that provide more efficient processing of a digital data related to matching of an input word, improved usage of space within a chip or better scalability across the multiple match system.

ROM-based multiple match circuit

Apparatus and methods for an improved priority encoder using only static circuit components. Features and aspects hereof rely exclusively on static logic circuits exclusive ROM and other memory structures as relied on in prior structures. The exemplary static circuit structures relied upon in accordance with features and aspects hereof are less susceptible to leakage current and other issues common in high density integrated circuit applications. Thus, features and aspects hereof avoid use of ROM and other similar memory devices in favor of digital encoders comprised of static logic circuits cascaded through multiplexers to provide priority encoding in digital circuit applications coupling multiple devices to a shared, common bus structure.

Apparatus and methods for a static mux-based priority encoder

An apparatus for memory error control coding comprising a first circuit and a second circuit. The first circuit may be configured to generate a multi-bit digital syndrome signal in response to a read data signal and a read parity signal. The second circuit may be configured to (i) detect an error when the bits of the syndrome signal are not all the same state and (ii) generate an error location signal in response the syndrome signal. The error location signal may be generated in response to fewer than all of the bits of the syndrome signal.

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Saint Paul, MN, United States of America

Richard John Stephani