General Electric Company

Richard J Patch

George D Rose, Jr

A four-terminal integrated circuit high-frequency RF amplifier connects to external circuitry via a ground terminal, and RF input terminal, an RF output terminal and a DC biasing terminal. A two stage amplification architecture is employed--a current gain transistor (common-emitter) is cascoded with a subsequent voltage gain transistor (common-base) while yet maintaining RF signal inversion overall from input to output so as to increase stability. A biasing current-mirror transistor provides biasing current to the current-gain transistor. A fourth transistor connected as a forward-biased collector-base shorted diode between the current mirror biasing transistor and a common external biasing terminal supplies bias current to the current-mirror biasing transistor while simultaneously minimizing voltage swings across the current-gain transistor. The amplifier module has very low input capacitance which does not change appreciably with changes in load impedance, and operates with great stability under a wide range of different input and output conditions and RF frequencies. Because of its relative simplicity and compactness, the amplifier can be used to great advantage as an IC 'building block' in a variety of different applications.

Integrated circuit amplifier module

A memory device is provided for an integrated injection logic (I.sup.2 L) device in solid state form by a resistor connected at one end to the logic device, and a diode having its cathode connected to the other end of the resistor at a programming junction, and its anode connected to a common point. If the diode conductors are melted or deformed by reverse diode current from the programming junction to the common point, a low impedance path is formed, and the logic portion is provided with a first logic input. If the diode conductors are left unmelted or intact, the logic portion is provided with a second logic input.

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Lynchburg, VA, United States of America

Richard J Patch