International Business Machines Corporation

Other

Infineon Technologies North America Corp.

Infineon Technologies Ag

Globalfoundries Singapore Pte. Ltd.

Chartered Semiconductor Manufacturing Ltd (corporation)

Richard J Murphy

Huajie Chen

Devendra K Sadana

Anthony Gene Domenicucci

Stephen W Bedell

Keith E Fogel

Dan Mihai Mocuta

Lawrence Alfred Clevenger

Keith Kwong Hon Wong

Judson Robert Holt

Christian Lavoie

Henry K Utomo

Jin Ping Liu

Nivo Rovedo

Sunfei Fang

Jin-Ping Han

Paul David Agnello

Ashima B Chakravarti

Kenneth John Giewont

Chung Woh Lai

Gerd Pfeiffer

Anita Madan

Patrick William Dehaven

Eric C Harley

Paul Andrew Ronsheim

Chester T Dziobkowski

Richard O Henry

Neena Garg

John P Murphy

David M Rockwell

Jerome D Schick

Frank J Schmidt, Jr

Yong Siang Tan

Hsiang-Jen Huang

Howard R Wilson

Stephan W Bedell

Terrance M Tornatore

Gregory D Pomarico

An integrated circuit system includes a substrate, a carbon-containing silicon region over the substrate, a non-carbon-containing silicon region over the substrate, and a silicon-carbon region, including the non-carbon-containing silicon region and the carbon-containing silicon region.

Integrated circuit system with carbon and non-carbon silicon

A method for fabricating a semiconductor device includes forming an SiGe region. The SiGe region can be an embedded source and drain region, or a compressive SiGe channel layer, or other SiGe regions within a semiconductor device. The SiGe region is exposed to an SC1 solution and excess surface portions of the SiGe region are selectively removed. The SC1 etching process can be part of a rework method in which overgrowth regions of SiGe are selectively removed by exposing the SiGe to and SC1 solution maintained at an elevated temperature. The etching process is carried out for a period of time sufficient to remove excess surface portions of SiGe. The SC1 etching process can be carried out at elevated temperatures ranging from about 25&#xb0; C. to about 65&#xb0; C.

Semiconductor fabrication process including an SiGe rework method

A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. The method includes first forming a Ge-containing layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant to Ge diffusion. A heating step is then performed at a temperature that approaches the melting point of the final SiGe alloy and retards the formation of stacking fault defects while retaining Ge. The heating step permits interdiffusion of Ge throughout the first single crystal Si layer and the Ge-containing layer thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer. Moreover, because the heating step is carried out at a temperature that approaches the melting point of the final SiGe alloy, defects that persist in the single crystal SiGe layer as a result of relaxation are efficiently annihilated therefrom. In one embodiment, the heating step includes an oxidation process that is performed at a temperature from about 1230&#xb0; to about 1320&#xb0; C. for a time period of less than about 2 hours. This embodiment provides SGOI substrate that have minimal surface pitting and reduced crosshatching.

High-quality SGOI by annealing near the alloy melting point

The invention forms an epitaxial silicon-containing layer on a silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface and avoids creating a rough surface upon which the epitaxial silicon-containing layer is grown. In order to avoid creating the rough surface, the invention first performs a hydrofluoric acid etching process on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. This etching process removes most of oxide from the surface, and leaves a first amount of oxygen (typically 1&#xd7;10&#x2212;1&#xd7;10/cmof oxygen) on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The invention then performs a hydrogen pre-bake process which heats the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface sufficiently to remove additional oxygen from the surface and leave a second amount of oxygen, less than the first amount, on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The heating process leaves an amount of at least 5&#xd7;10/cmof oxygen (typically, between approximately 1&#xd7;10/cmand approximately 5&#xd7;10/cmof oxygen) on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. By leaving a small amount of oxygen on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface, the heating processes avoid changing the roughness of the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. Then the process of epitaxially growing the epitaxial silicon-containing layer on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface is performed.

Method of preventing surface roughening during hydrogen prebake of SiGe substrates

A method of forming a salicide on a semiconductor device includes depositing a first refractory metal layer over a silicon region of a substrate, depositing a near-noble metal layer over the first refractory metal layer, and depositing a second refractory metal layer over the near-noble metal layer. The semiconductor device is annealed in a first annealing process to form a silicide layer abutting the doped region of the semiconductor device. Un-reacted portions of the near-noble metal layer and the second refractory metal layer are removed. The device may be annealed in an optional second annealing process to convert the silicide layer to a low resistance phase silicide material. Junction leakage and bridging are minimized or eliminated by embodiments of the present invention, and a smoother silicided surface is achieved.

Salicide formation method

A method is disclosed for forming an epitaxial layer on a front side of a substrate formed of a monocrystalline material, using a chemical vapor deposition system. In this method, a plurality of gettering wafers formed of a gettering material are arranged in the CVD system, such that the front side of each substrate is facing one of the gettering wafers. Impurities present in the CVD system during formation of the epitaxial layer are gettered by the gettering wafers. Alternatively, a layer of a gettering material is deposited on a back side of each of the plurality of substrates, and the substrates are arranged such that the front side of each substrate is facing the backside of another of the substrates. In another embodiment, a layer of a gettering material is deposited on an interior surface of the CVD system. Impurities removed from the CVD system during epitaxial formation include oxygen, water vapor and other oxygen-containing contaminants.

Method for improving CVD film quality utilizing polysilicon getterer

A method of improving surface morphology of a semiconductor substrate when using an SOI technique comprises providing a silicon ingot positioned on a support member, orientating the silicon ingot in relation to the support member, and a cutting device, and cutting the silicon ingot along about a (100) crystal plane of the silicon ingot, preferably using a wire saw. This then provides a silicon substrate having an initial surface defining a miscut angle which is less than about 0.15 degrees from the (100) crystal plane. The method then comprises processing the silicon substrate using SIMOX processing, which includes implanting oxygen atoms in the silicon substrate to form a buried oxide layer and annealing the silicon substrate to provide a final substrate surface. Finally, the method includes accepting the final substrate surface for further processing when the final substrate surface measures between 2-20 &angst; RMS using an atomic force microscopy technique.

Surface roughness improvement of SIMOX substrates by controlling orientation of angle of starting material

Chain hanger devices are described for attachment to a bicycle frame for supporting and retaining the drive chain vertically and laterally when the rear wheel and drive sprocket are removed from the frame. The hanger devices engage the chain without requiring manual manipulation of the chain. The rear wheel can be inserted into the frame again without physically handling the chain.

Chain catcher for bicycles

A method and apparatus for determining the thickness of an interfacial oxide film intermediate to a polysilicon layer of a first conductivity type and a silicon substrate of a second conductivity type supporting a p-n junction. Radiant energy, preferably in the form of light, is directed on to the top surface of the polysilicon layer thereby stimulating carriers which concentrate at the interfacial oxide film, allowing the excited carriers to diffuse across the oxide film, and creating a short circuit, the magnitude of which is inversely related to the thickness of the interfacial oxide film.

Method and apparatus for determining the thickness of an interfacial

An apparatus for strengthening the bodies of individuals including a hexagon shaped grid or rack positioned above a surface of water such as created by a swimming pool. The hexagon shape of each component of the grid permits an individual to grasp alternately individual segments of the grid and progress in any direction relative to the water, either during exercise or specially designed games utilizing the improved features of the apparatus. The apparatus is particularly useful in connection with physical development of handicapped children. The grid itself is adjustably mounted with respect to the level of water permitting it to be raised or lowered to different heights above the water dependent on the age of the participant or his or her stage of development.

Physical exercise apparatus

Growing community of inventors

Clinton Corners, NY, United States of America

Richard J Murphy