Raytheon Company

Richard J Edry

Martin J Schwartz

H Frank Howes

A random access memory having the capability to access one or more bytes in one or more memory word locations of a multi-byte memory array within one memory cycle. Variable length instruction and data words composed of multiple bytes are stored in a block of addressable locations in a memory so that individual bytes of each word are aligned in columns. Each column of bytes is addressable independently of the other byte columns via adders. A most significant bit portion of a memory location address is fed into a first input of column adders and the output of a first decoder circuit is fed into a second input of the adders for address incrementing within one memory cycle. A second decoder circuit generates a separate read or write enable line to each column of bytes. Both decoders are controlled by a least significant bit portion of the memory address and reference word byte size codes. A bi-directional multiplexer rearranges the order of the bytes so they appear in the proper order at the memory interface.

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Ashland, MA, United States of America

Richard J Edry