Freescale Semiconductor,inc.

Richard J Desouza

Xin Lin

Patrice M Parris

Moaniss Zitouni

Jennifer H Morrison

Edouard D deFresart

Methods and apparatus are provided for a MOSFET () exhibiting increased source-drain breakdown voltage (BVdss). Source (S) () and drain (D) () are spaced apart by a channel () underlying a gate () and one or more carrier drift spaces (') serially located between the channel () and the source (&#x2032;) or drain (&#x2032;). A buried region (&#x2032;) of the same conductivity type as the drift space (&#x2032;) and the source (&#x2032;) or drain (&#x2032;) is provided below the drift space (&#x2032;), separated therefrom in depth by a narrow gap (&#x2032;) and ohmically coupled to the source (&#x2032;) or drain (&#x2032;). Current flow () through the drift space produces a potential difference (Vt) across this gap (&#x2032;). As the S-D voltage (Vo) and current (, Io) increase, this difference (Vt) induces high field conduction between the drift space (&#x2032;) and the buried region (&#x2032;) and diverts part (, It) of the S-D current (, Io) through the buried region (&#x2032;) and away from the near surface portions of the drift space (&#x2032;) where breakdown generally occurs. Thus, BVdss is increased.

Growing community of inventors

Tempe, AZ, United States of America

Richard J Desouza