Bae Systems Information and Electronic Systems Integration Inc.

Richard J Blackwell, Jr

Louise C Sengupta

Pierre-Alain S Auroux

Don A Harris

Daniel J O'Donnell

Rosanne H Tinkler

Jeannie Geneczko

Jeffrey F Bryant

Mihir D Boal

Tuyet T Bach

Donald D McManus

Evan A Binkerd

An uncooled high-resolution 12 micron pixel pitch 3D-stacked component thermal camera including an electronics board, a camera circuit card assembly (CCA) with an application-specific integrated circuit (ASIC), a synchronous dynamic random access memory (SDRAM), flash memory, a spacer, a wafer level packaged Focal Plane Array (FPA) wafer with a lens housing attach ring on the FPA, and a window.

Stacked modular architecture high-resolution thermal chip camera

A 3D wafer-integration uncooled infrared (IR) microbolometer focal plane array (FPA) sensor includes a first die with an FPA of uncooled IR microbolometers, a second die signal-processing layer. The dies are vertically aligned, stacked with 3D wafer bonding, and interconnected. Interconnection include vertical electrical interconnects. Separate optimized manufacturing processes are used for die, so that additional processing costs of the FPA die are leveraged and 3D integration is completed at wafer level, minimizing total device cost and maximizing die count per wafer.

3D stacked uncooled IR sensor device and method

An apparatus and method for a wafer level vacuum package uncooled microbolometer focal plane array (FPA) on a wafer level substrate with a thin film getter-reflector (G-R). The G-R removes gas from the vacuum package and is reflective in the frequency band of the FPA. Sensor pixels are supported about a quarter-wavelength above the G-R which is within the perimeter of the imaging array. The package is evacuated through a single aperture, and vacuum is maintained for the lifetime of the FPA. Imaging sensor size is reduced while maintaining resolution by reducing non-imaging area.

Wafer-level intrapixel getter reflector whole die encapsulation device and method

A post-supported bolometer pixel and a process for manufacturing it comprising the steps of depositing a sacrificial layer over a substrate with readout integrated circuit pads that connect to the integrated circuit; forming vias through the sacrificial layer to the metal pads connecting to the readout integrated circuit; filling the vias with metal and polishing said metal to the surface of the sacrificial layer; forming microbolometer pixel layers over the filled vias and sacrificial layer; and removing the sacrificial layer to leave a post-supported pixel.

Post-supported microbolometer pixel

An apparatus and method for assembling a large microbolometer infrared imaging array from sub-arrays, including the step of forming a sub-array assembly of independent imaging arrays on the silicon wafer as the imaging sensor is being processed, whereby seams or gaps in a resulting image are avoided.

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Dracut, MA, United States of America

Richard J Blackwell, Jr