International Business Machines Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Hgst Netherlands, B.v.

Hitachi Global Storage Technologies

Richard Hsiao

Robert Fontana

Hugo Alberto Emilio Santini

Son Van Nguyen

Patrick Rush Webb

Cherngye Hwang

Hugo Alberto Santini

Quang Le

Neil Leslie Robertson

Paul Phong Nguyen

James Devereaux Jarratt

Edward Hin Pong Lee

Wipul Jayasekara

Yiping Hsiao

Denny Tang

Clinton David Snyder

Thomas Edward Dinan, Jr

Mustafa Pinarbasi

Moris Musa Dovek

Jeffrey Scott Lille

Mohamad Towfik Krounbi

Howard Gordon Zolla

Virgil S Speriosu

Ciaran Avram Fox

Timothy J Moran

Sue Siyang Zhang

Prakash Kasiraj

John I Kim

Eric James Lee

Samuel Wei-san Yuan

Voya Rista Markovich

Daniele Mauri

Jonathan David Reid

Tsann Lin

Richard Anthony Conti

Brian Rodrick York

Ashok Lahiri

Steven G Barbee

Donald P Seraphim

Jonathan Daniel Chapple-Sokol

Frederick Hayes Dill

Joseph John Fatula, Jr

Charles Robert Davis

Ian Robson McFadyen

Andrew C Ting

James Anthony O'Neill

Daniel Wayne Bedell

Jae M Park

Yuexing Zhao

Thao Pham

James R Loomis

Li-Chung Lee

Narayana V Sarma

Bradley Douglas Webb

Jack M McCreary

Thomas Carl Clarke

Steven Paul Zuhoski

Donald Leslie Wilson

Carol Yoshiko Inouye

Richard Thomas Campbell

Frederick Hayes Dill, Jr

Brian E Brusca

Joel S Forrest

Emo Hilbrand Klaassen

Hardayal Singh Gill

Zheng Gao

Thomas R Albrecht

Vladimir Nikitin

David John Seagle

Liubo Hong

Chando Park

Ernesto Esteban Marinero

Bruce David Terris

Klaas Berend Klaassen

Chie Ching Poon

Scott Arthur MacDonald

Amanda Baer

David Eugene Heim

Hong Xu

John David Westwood

Michael J Armstrong

Michael Paul Salo

Joseph Francis Smyth

Sangmun Oh

Justin W Wong

Pei C Chen

Jila Tabib

Chang-Man Park

Eugene Yuexing Zhao

Diana Perez

Wipul Pemsiri Jayaekara

Justin Wai-Chow Wong

Edward Hing Pong Lee

James Devereaux Jarrett

According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.

Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same

A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.

Perpendicular pole structure and method of fabricating the same

A method for creating a write element of a magnetic head according to one embodiment includes forming a first pole pedestal; forming a write gap layer above the first pole pedestal; forming a second pole pedestal above the write gap layer; and forming at least one of: a cap layer of CoFeON between the first pole pedestal and the write gap, and a seed layer of CoFeON between the write gap layer and the second pole pedestal. Note that other layers may be interspersed between those set forth here.

Method for creating write element having high magnetic moment Co-Fe-O-N film with soft magnetic properties

A method for fabricating a magnetic write head with a coil with a high aspect ratio using a Chemical Vapor Deposition process such as Atomic Layer Deposition (ALD), High Speed ALD, Plasma Enhanced ALD (PEALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) to form encapsulating films over the coils without voids is disclosed. Materials which can be used for encapsulation include AlO, SiO, AlN, TaO, HfO, ZrO, and YtO. The use of an ultra-conformal deposition process allows the pitch of the coils to be smaller than it is possible in the prior art. The method also allows materials with a smaller coefficient of thermal expansion than hardbake photoresist to be used with resulting improvements in thermal protrusion characteristics.

Method for using CVD process to encapsulate coil in a magnetic write head

A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF/CHF). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H/N/CHF/CHreducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.

Magnetic head coil system and damascene/reactive ion etching method for manufacturing the same

The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.

Magnetoresistive/inductive write head assembly formed with seed layers having a uniform thickness

The induction coil of the magnetic head of the present invention is fabricated in a patterned electrical insulation material, preferably utilizing reactive ion etch (RIE) techniques. The electrical insulation material is particularly patterned such that it is formed away from the ABS surface and in the location of the induction coil. A fill layer is deposited around the patterned electrical insulation material layer, such that the fill layer is disposed at the ABS surface. In a preferred embodiment, the patterned electrical insulation material is initially fabricated from hard baked photoresist and subsequent to the deposition of the fill layer the hard baked photoresist material is removed and replaced by SiO. The SiOis thereby located away from the ABS surface and the induction coil is subsequently fabricated within the SiOmaterial.

Method of manufacturing a magnetic head having short pole yoke length

A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.

Method for manufacturing a magnetic head coil structure and/or pole tip structure

Magnetic head coil structure and method for manufacturing the same

Perpendicular pole having and adjacent non-magnetic CMP resistant structure

A write element includes a first pole pedestal and a second pole pedestal opposing the first pole pedestal and defining a write gap between the first and second pole pedestals. A first layer of CoFeON is film positioned between the first pole pedestal and the write gap. A second layer of CoFeON film is positioned between the second pole pedestal and the write gap.

High magnetic moment Co-Fe-O-N films with soft magnetic properties

The magnetic head includes a P2 pole tip in which the P2 pole tip material is electroplated upon a sidewall of the P2 pole tip photolithographic trench. To accomplish this, a block of material is deposited upon a write gap layer, such that a generally straight, vertical sidewall of the block of material is disposed at the P2 pole tip location. Thereafter, an electroplating seed layer is deposited upon the sidewall. A P2 pole tip trench is photolithographically fabricated such that the sidewall (with its deposited seed layer) is exposed within the P2 pole tip trench. Thereafter, the P2 pole tip is formed by electroplating pole tip material upon the seed layer and outward from the sidewall within the trench, The width of the P2 pole tip is thus determined by the quantity of pole tip material that is deposited upon the sidewall.

Narrow write head pole tip fabricated by sidewall processing

A method for forming a magnetic structure, such as a pole tip, includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.

Magnetic pole tip for perpendicular magnetic recording

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San Jose, CA, United States of America

Richard Hsiao