Versum Materials Us, LLC

Air Products and Chemicals, Inc.

Richard Ho

Manchao Xiao

Xinjian Lei

Matthew R MacDonald

Mark Leonard O'Neill

Ronald Martin Pearlstein

Haripin Chandra

Daniel P Spence

Meiliang Wang

Bing Han

Agnes Derecskei-Kovacs

Raymond Nicholas Vrtis

Robert Gordon Ridgeway

Jianheng Li

Steven Gerard Mayorga

Chandra Haripin

Matthew R Macdonald

Mark Leonard O'neill

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.

Compositions and methods using same for deposition of silicon-containing film

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Organoaminosilane precursors and methods for depositing films comprising same

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties.

Precursors and flowable CVD methods for making low-k films to fill surface features

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.

Compositions and methods for the deposition of silicon oxide films

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:  In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350&#xb0; C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Described herein is an FCVD process for depositing a silicon-containing film from at least one alkoxysilylamine precursor having the following Formulae A and B: wherein Rand Rare independently selected from a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl group, and a Cto Caryl group and wherein R, R, R, R, and Rare independently selected from the group consisting of hydrogen, a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl, a Cto Caryl group, and a linear or branched Cto Calkoxy group.

Alkoxysilylamine compounds and applications thereof

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350&#xb0; C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.

Organoaminosilanes and methods for making same

Described herein are alkoxysilylamine precursors having the following Formulae A and B: wherein Rand Rare independently selected from a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl group, and a Cto Caryl group and wherein R, R, R, R, and Rare independently selected from the group consisting of hydrogen, a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl, a Cto Caryl group, and a linear or branched Cto Calkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.

A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR)Rand a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR)R; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R(RO)Si&#x2014;R&#x2014;Si(OR)Rand a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (RO)R(X)Si&#x2014;R&#x2014;Si(OR)Rwherein at least one or all of the Rand Rsubstituents are the same in both the silicon-containing precursor and catalyst compound are described herein. The formulations can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.

Catalyst and formulations comprising same for alkoxysilanes hydrolysis reaction in semiconductor process

Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein:(RR)NSiROROR&#x2003;&#x2003;Formula (I)wherein Ris independently selected from a linear or branched Cto Calkyl group; a Cto Calkenyl group; a Cto Calkynyl group; a Cto Ccyclic alkyl group; and a Cto Caryl group; Rand Rare each independently selected from hydrogen; a linear or branched Cto Calkyl group; a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl group, and a Cto Caryl group; and Rand Rare each independently selected from a linear or branched Cto Calkyl group; a Cto Calkenyl group; a Cto Calkynyl group; a Cto Ccyclic alkyl group; and a Cto Caryl group.

Growing community of inventors

Anaheim, CA, United States of America

Richard Ho