Cambridge Display Technology Limited

Cambridge Enterprise Limited

Cambridge University Technical Services Limited

Plastic Logic Limited

Other

National University of Singapore

The British Petroleum Company, P.l.c.

King Abdulaziz City for Science and Technology

Seiko Epson Corporation

U.S. Philips Corporation

Eidgenossische Technische Hochschule Zurich

Lynxvale Limited

Cambridge Capital Management Limited

Cambridge Research and Innovation Limited

Flexenable Limited

Richard Henry Friend

Andrew Bruce Holmes

Henning Sirringhaus

Jeremy H Burroughes

Donal D Bradley

Paul Leslie Burn

Lay-Lay Chua

Peter Kian-Hoon Ho

Stephen Carl Moratti

Arno Kraft

Takeo Kawase

Neil Clement Greenham

David John Lacey

Peter Devine

Christopher John Bright

Peter Ho

Xiao-Chang Li

Kenneth Andrew Murray

Karl Pichler

Zhi Kuang Tan

Adam R Brown

Rui-Qi Png

Perq-Jon Chia

Adam Brown

Ji-Seon Kim

Henry James Snaith

Jonathan J Halls

Dawei Di

Wilhelm Huck

Richard John Wilson

Ichio Yudasaka

Ana Claudia Arias

Stephen Karl Heeks

J Devin MacKenzie

Franco Cacialli

Tobin Jay Marks

Antonio Facchetti

Mutsumi Kimura

Carl R Towns

Paul Smith

Julian Charles Carter

Simon Tam

Richard J Wilson

Guangru Li

Nir Tessler

Claude M Berthier

Josef Herbert Martens

Reza Saberi Moghaddam

Clare Foden

William James Feast

Kieran Reynolds

Philip Charles Allen

Myoung Hoon Song

Pablo Docampo

Bernard Wenger

Gitti Frey

Natalie Stutzmann

Akshay Rao

Giuseppina Pace

Hermann F Wittman

Wilhelmus T S Huck

Rusli Daik

Aditya Sadhanala

Jie-Cong Tang

Bibin Thomas Anto

Kim Kian Choo

Alan J Harrison

Robert N Marks

May Ling Lai

Stephen C Moratti

Peter J Hamer

Raoul Cervini

Derek R Baigent

Annette Kohler

Donald C Bradley

Donal Donat Conor Bradley

Felix Deschler

Johannes Gruener

Dinesh Kabra

Helmut Becker

Michael Price

Fabian Hanusch

Zi-Jian Zheng

Junfeng Fang

Feng Gao

Sandeep Pathak

Bodo Wallikewitz

Chris Bright

Bruno Ehrler

Maxim Tabachnyk

Jeremy Henley Burroughes

Zijian Zheng

Pichler Karl c/o The Fed Corporation Corporation

J Devin Mackenzie

Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

Electroluminescent device

A solid state light-emitting device comprising: a first electrode coupled to a first charge injecting layer; a second electrode coupled to a second charge injecting layer; an emissive layer comprising a perovskite material, wherein the emissive layer is provided between the first and second charge injecting layers; and wherein the bandgaps of the first and second charge injecting layers are larger than the bandgap of the emissive perovskite layer.

The present invention relates to a light emitting device comprising a light source and a luminescent material, which luminescent material comprises one or more matrix materials and two pluralities of nanoparticles, which two pluralities of nanoparticles comprise different perovskite compounds. The invention also relates to a luminescent material.

Matrix-incorporated organic-inorganic metal halide perovskite nano-particles as luminescent material

We describe a luminescent device () comprising a substrate () and a film comprising perovskite crystals () deposited on the substrate, wherein the film comprising perovskite crystals is encapsulated with a layer ()) or within a matrix () of an insulating oxide or an insulating nitride.

Luminescent device

This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Multilayer heterostructures for application in OLEDs and photovoltaic devices

An optoelectronic device comprising a charge transfer layer including a first semiconductive polymer comprising one or more zwitterions.

Organic semiconductors

A cross-linking moiety having a general formula I: Ar-W, wherein Arcomprises a fluorinated phenyl azide group having at least one non-fluorine substituent that is bulkier than fluorine at a meta position relative to the azide group, and W comprises an electron-withdrawing group.

Cross-linking moiety

A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Method for doping a polymer

A light-emissive device comprising a light-emissive material provided between first and second electrodes such that charge carriers can move between the first and second electrodes and the light-emissive material, wherein the device includes a layer of a polymer blend provided between the first and second electrodes, phase separation of the polymers in the polymer blend having been induced in at least a portion of the polymer blend so as to control the propagation of light emitted by the light-emissive material in a predetermined direction.

Optoelectronic devices and a method for producing the same

A light emissive or photovoltaic device comprising: a cathode structure for injecting electrons, the cathode structure having one or more constituent regions; an anode structure for injecting holes, the anode structure having one or more constituent regions; and an organic light emissive component located between the anode structure and the cathode structure; the refractive indices and the thicknesses of the or each constituent region of the cathode and anode structures and of the light emissive component being such that the emission or absorption spectrum of the device is substantially angularly dependent.

Electro-optic diode devices

A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase.

Aligned polymers for an organic TFT

A method of forming a polymer device including the steps (i) of depositing on a substrate a solution containing a polymer or oligomer and a crosslinking moiety, to form a layer, and, (ii) curing the layer formed in step (i) under conditions to form an insoluble crosslinked polymer, wherein the crosslinking moiety is present in step (i) in an amount in the range of from 0.05 mol % to 5 mol % based on the total number of moles or repeat units of the polymer or oligomer and the crosslinking moiety in the solution.

Manufacture of a polymer device

Growing community of inventors

Fulbourn, United Kingdom

Richard Henry Friend