International Business Machines Corporation

Richard Hammond

Jack Oon Chu

Steven John Koester

John Albrecht Ott

Khalid EzzEldin Ismail

Patricia May Mooney

A layered structure for forming electronic devices thereon is provided. The layered structure includes an over-shoot layer, SiGe, within a relaxed SiGelayer, wherein y=X+Z and Z is in the range from 0.01 to 0.1 and X is from 0.35 to 0.5. The over-shoot layer has a thickness that is less than its critical thickness.

High speed composite p-channel Si/SiGe heterostructure for field effect devices

A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.

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Richard Hammond