Kennecott Corporation

Other

Stemcor Corporation

Better Semiconductor Processes (bsp)

Richard E Tressler

Russell D Smith

Gabriel P DeMunda

Joseph R Monkowski

Martin R Kasprzyk

Roger L Baeten

Herman J Boeglin

Monika O Ten Eyck

Gregory A Kaiser

Joseph Stach

New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500.degree.-1400.degree. C. to release As.sub.2 O.sub.5, As.sub.2 O.sub.3 and/or elemental arsenic vapors for transport to semiconductor elements as a controlled dopant.

Arsenate dopant sources and method of making the sources

New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopants, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant reaction sintered Si.sub.3 N.sub.4 carrier material.

Porous silicon nitride semiconductor dopant carriers

New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant carrier is comprised of a rigid, multiphase dimensionally stable refractory foam, formed through the impregnation, and subsequent thermal destruction of an open-celled organic polymer foam.

Foam semiconductor dopant carriers

New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant carrier comprised of SiC, elemental silicon or mixtures thereof.

Porous semiconductor dopant carriers

An improved semiconductor wafer handling system completely eliminates the need for boats, sleds, paddles, wheeled carriers, etc., customarily employed in transporting wafers during heat processing through the use of a plurality of rigid, polished cantilevered rods having a multiplicity of spaced slots for cooperatively holding wafers in an upright position. The system provides a means for achieving higher production yields of such semiconductor elements by generating fewer contaminating particles and through less exposure to ambient environment.

Cantilevered boat-free semiconductor wafer handling system

A process for growing crystals of an inorganic material by forming a solution of the material in a solvent for the compound, forming a film of the solution and etching the solvent from the film with an etching gas until crystals of the material form. The solution has a solidification temperature lower than the melting or sublimation temperature of the material and higher than the condensation temperatures of the etching gas and of reaction products formed by the etching. The etching temperature is between the solidification temperature of the solution and the melting or sublimation temperature of the material and is lower than the vaporization temperature of the solvent and solution and higher than the condensation temperatures of the etching gas and reaction products.

Solid film growth via preferential etching of liquid solutions

A method for uniformly coating ceramic fibers comprising from about 40 to 100 weight percent aluminum oxide with Cr.sub.2 O.sub.3. The method comprises precipitating Cr.sub.2 O.sub.3.xH.sub.2 O (chromium oxide hydrate) upon the fibers followed by converting the Cr.sub.2 O.sub.3.xH.sub.2 O to Cr.sub.2 O.sub.3. The resulting Cr.sub.2 O.sub.3 coated fibers have good shrinkage resistance, good temperature resistance and good flexibility in thick fiber articles.

Method for coating alumina containing refractory fibers with chromium

A ceramic fiber and a shrink resistant article manufactured therefrom. The fiber comprises at least 80 weight percent of a refractory compound selected from the group consisting of silica, alumina, aluminum silicate, titania, zirconia, zirconium silicate and mixtures thereof and which comprises less than 5 combined weight percent of alkali or alkaline metal oxide or alkali or alkaline metal silicate. The fiber is uniformly coated with from about 0.01 to about 5 weight percent of Cr.sub.2 O.sub.3.

Growing community of inventors

Julian, PA, United States of America

Richard E Tressler