Flir Systems, Incorporated

Teledyne Flir Commercial Systems, Inc.

Richard E Bornfreund

Robert F Cannata

Yaroslava Petraitis

Jeffrey Brian Barton

Patrick Franklin

Edward K Huang

James L Dale

Tommy Marx

Joseph H Durham

Eric A Kurth

Andrew D Hood

Gregory A Carlson

Ronald W Berry

Robert Simes

Kevin Peters

Devin Leonard

Craig Shott

Reza Salafian

Saumya Kothari

Tiahaar Kurtheru Clayton McKenzie

Bryan Gall

Paula Heu

Techniques are disclosed for facilitating interconnecting semiconductor devices. In one example, a method of interconnecting a first substrate to a second substrate is provided. The method includes forming a first plurality of contacts on the first substrate. The method further includes forming an insulative layer on the first substrate. The method further includes forming a second plurality of contacts on the second substrate. The method further includes joining the first plurality of contacts to the second plurality of contacts to form interconnects between the first substrate and the second substrate. When the first and second substrates are joined, at least a portion of each of the interconnects is surrounded by the insulative layer. Related systems and devices are also provided.

Semiconductor device interconnection systems and methods

Systems and methods may be provided for coupling together semiconductor devices. One or more of the semiconductor devices may be provided with an array of bump contacts formed in an etch back process. The bump contacts may be indium bumps. The indium bumps may be formed by depositing a sheet of indium onto a surface of a device substrate, depositing and patterning a layer of photoresist over the indium layer, and selectively etching the indium layer to the surface of the substrate using the patterned photoresist layer to form the indium bumps. The substrate may be an infrared detector substrate. The infrared detector substrate may be coupled to a readout integrated circuit substrate using the bumps.

Method and systems for coupling semiconductor substrates

Systems and methods may be provided for generating reduced-height circuit packages such as infrared detector packages. An alignment and dicing system may include an infrared camera that captures images of alignment marks of a wafer assembly through a lid wafer of the wafer assembly, a light source that illuminates the alignment marks through the lid wafer, and dicing equipment that dices the wafer assembly based on infrared images captured using the infrared camera. The light source may illuminate the alignment marks through the lid wafer by providing light such as infrared light to the wafer assembly through optics of the infrared camera. The infrared camera may capture images of alignment marks formed on a detector wafer of the wafer assembly or on an interior or lower surface of the lid wafer through the lid wafer. The dicing equipment may be aligned with the wafer assembly based on the captured images.

Wafer level packaging of reduced-height infrared detectors

Systems and methods may be provided for fabricating infrared focal plane arrays. The methods include providing a device wafer, applying a coating to the device wafer, mounting the device wafer to a first carrier wafer, thinning the device wafer while the device wafer is mounted to the first carrier wafer, releasing the device wafer from the first carrier wafer, singulating the device wafer into individual dies, each die having an infrared focal plane array, and hybridizing the individual dies to a read out integrated circuit.

Wafer-level back-end fabrication systems and methods

Systems and methods may be provided for forming enhanced infrared absorption microbolometers. An enhanced infrared absorption microbolometer may include a metal cap formed from a thin layer of oxidizing metal such as titanium and/or a titanium oxide. The metal cap may be formed within a bridge portion of the microbolometer. The bridge portion may include other layers such as first and second absorber layers disposed on opposing sides of a layer of temperature sensitive resistive material. The layer of temperature sensitive resistive material may be located between the metal cap and a reflecting metal layer formed on a readout integrated circuit for the microbolometer.

Systems and methods for enhanced bolometer response

A system is disclosed, including a processing chamber for a deposition process; a cathode within the chamber, configured to introduce a sputter gas and a reactive gas adjacent to a target; a substrate holder, disposed opposite the cathode within the processing chamber, configured to secure a substrate to receive a deposition from the target; and a control system configured to monitor a target voltage and to control a flow rate of the reactive gas to maintain the target voltage within a desired range during the deposition process. Methods and devices for deposition processes are also disclosed.

Deposition systems and methods

A microbolometer is disclosed, including a bottom multilayered dielectric, having a first silicon oxynitride layer and a second silicon oxynitride layer disposed above the first silicon oxynitride layer, the first and second silicon oxynitride layers having different refractive indices. The microbolometer further includes a detector layer disposed above the bottom multilayered dielectric, the detector layer comprised of a temperature sensitive resistive material, and a top dielectric disposed above the detector layer.

Multilayered microbolometer film deposition

In one embodiment, a detector includes an AlInSb absorber layer, and an AlInSb passivation layer disposed above the AlInSb absorber layer, wherein x&#x3c;y. The detector further includes a junction formed in a region of the AlInSb absorber layer, and a metal contact disposed above the junction and through the AlInSb passivation layer.

Aluminum indium antimonide focal plane array

In one embodiment, a detector includes an AlInSb passivation/etch stop layer, an AlInSb absorber layer disposed above the AlnSb passivation/etch stop layer, and an AlInSb passivation layer disposed above the AlInSb absorber layer, wherein x&#x3c;z and x&#x3c;y. The detector further includes a junction formed in a region of the AlInSb absorber layer, and a metal contact disposed above the junction and through the AlInSb passivation layer.

A microbolometer is disclosed, including a bottom dielectric of a bridge structure; a detector layer disposed above the bottom dielectric, the detector layer comprised of a metal-doped vanadium pentaoxide material; and a top dielectric disposed above the detector layer.

Microbolometer detector layer

In one embodiment, a dual-band focal plane array includes a readout circuit (ROIC), and a plurality of electro-optical (EO) polymer pixels for absorbing visible and/or short wave infrared (SWIR) radiation, each of the EO polymer pixels electrically coupled to the ROIC. The detector further includes a plurality of microbolometers for detecting long wave infrared (LWIR) radiation, each microbolometer electrically coupled to the ROIC via contact legs disposed between adjacent microbolometers and between adjacent EO polymer pixels. A method of fabricating a focal plane array is also provided.

Monolithic electro-optical polymer infrared focal plane array

Method and systems for aligning a first component with a second component are disclosed. For example, a first component may be aligned with a second component during an assembly process, with a first camera used to facilitate the viewing of one or more alignment features of the first component and/or the second component with infrared energy that is transmitted through the first component. A second camera may be used to view at least a portion of the first component and/or at least a portion of the second component using visible light.

Growing community of inventors

Santa Barbara, CA, United States of America

Richard E Bornfreund