At&t Bell Laboratories

Richard E Ahrens

Shin-Shem Pei

Claude L Reynolds, Jr

Randolph H Burton

Michael P Iannuzzi

Alex Lahav

Albert G Baca

Thi-Hong-Ha Vuong

A process for manufacturing selectively doped heterostructure field-effect transistors (SDHTs), a desired wafer structure for SDHT fabrication and a method for isolating SDHTs on the wafer are disclosed herein. The wafer has epitaxial layers grown on a substrate. The layers are: a buffer layer of GaAs, a first spacer layer of AlGaAs, a donor layer of AlGaAs, a second spacer layer of AlGaAs, a first cap layer of GaAs, an etch-stop layer of AlGaAs and a second cap layer of GaAs. A protective layer of AlGaAs may then be grown on the second cap layer to protect the second cap layer from contamination or damage. Also a superlattice may first be grown on the substrate.

Fabrication of GaAs integrated circuits

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Muhlenberg, PA, United States of America

Richard E Ahrens