Advanced Micro Devices Corporation

Richard David Edwards

Christopher Allen Bode

Anthony John Toprac

Paul W Ackmann

Curtis Warren Doss

James Broc Stirton

Khanh B Nguyen

Edward Christopher Stewart

Gary C Jones

Stuart E Brown

Stu Brown

Harry Jay Levinson

Matthew A Purdy

Anastasia Oshelski Peterson

Scott Gregory Bushman

Anastasia Lynn Oshelski

Anastasia L Osheiski

A method and an apparatus for selectively applying correction to a process control. Manufacturing data relating to the processing of a workpiece is acquired. The manufacturing data includes metrology data relating to the processed workpiece. An adjustment for at least a first or a second control input parameter is determined based upon the manufacturing data. The first and second control input parameters are organized to isolate the first control input parameter from the second control input parameter for adjusting at least one of the first and the second control input parameters, using a controller.

Prioritizing an application of correction in a multi-input control system

A method includes measuring a first overlay error between a first process layer and a second process layer using a first overlay target formed on the second process layer. A second overlay error between the first process layer and a third process layer is measured using a second overlay target formed on the third process layer. At least one parameter of an operating recipe for performing a photolithography process on the first process layer is determined based on the first and second overlay error measurements. A system includes a metrology tool and a controller. The metrology tool is configured to measure a first overlay error between a first process layer and a second process layer using a first overlay target formed on the second process layer and measure a second overlay error between the first process layer and a third process layer using a second overlay target formed on the third process layer. The controller is configured to determine at least one parameter of an operating recipe for performing a photolithography process on the first process layer based on the first and second overlay error measurements.

Method and apparatus for overlay control using multiple targets

A method of using critical dimension measurements to control stepper process parameters is disclosed. In one illustrative embodiment, the method comprises forming a masking layer above a process layer, the masking layer having a plurality of features formed therein, measuring at least one critical dimension of a plurality of features positioned within at least one exposure field of a stepper exposure process used in forming the features, and determining a tilt of the masking layer within at least one exposure field based upon the measured critical dimensions of the plurality of features. In one illustrative embodiment, the system comprises a metrology tool adapted to measure at least one critical dimension of a plurality of features in a masking layer and a controller for determining a tilt of the masking layer based upon the measured critical dimensions of said plurality of features.

Method of using critical dimension measurements to control stepper process parameters

A method of using scatterometric techniques to control stepper process is disclosed. In one illustrative embodiment, the method comprises providing a library of optical characteristic traces, each of which corresponds to a grating structure comprised of a plurality of features having a known profile, and forming a plurality of grating structures in a layer of photoresist, each of said formed grating structures being comprised of a plurality of features having an unknown profile. The method further comprises illuminating the formed grating structures, measuring light reflected off of each of the formed grating structures to generate an optical characteristic trace for each of the formed grating structures, comparing each of said generated optical characteristic traces to at least one optical characteristic trace from the library, and modifying at least one parameter of a stepper exposure process to be performed on at least one subsequently processed wafer based upon the comparison of the generated optical characteristic traces and the optical characteristic trace from the library. In another embodiment, the generated optical characteristic traces for the grating structures are compared to a target optical characteristic trace for the grating structures, and at least one parameter of an exposure process to be performed on a layer of photoresist formed on a subsequently processed wafer may be determined or modified based upon this comparison.

Method of using scatterometry measurements to control stepper process parameters

The present invention provides for a method and apparatus for correction of overlay control errors. Semiconductor devices are processed based upon control input parameters. The processed semiconductor devices are examined in a review station. The control input parameters are modified in response to the examination of the processed semiconductor devices. New control input parameters are implemented for a subsequent run of the semiconductor device processing step based upon the modification of the control input parameters.

Method and apparatus for run-to-run controlling of overlay registration

A method for determining operability of a tool includes generating an event log including a plurality of events associated with the operation of the tool; parsing the event log to identify a crucial event; and initiating an automatic corrective action in response to identifying a crucial event. A manufacturing system includes a tool and a tool monitor. The tool is adapted to generate an event log including a plurality of events associated with the operation of the tool. The tool monitor is adapted to parse the event log to identify a crucial event and initiate an automatic corrective action in response to identifying a crucial event.

Method and apparatus for parsing event logs to determine tool operability

In one illustrative embodiment, a method is provided that comprises energizing a light source to provide light having a preselected intensity. A first photosensor, which is capable of delivering a first signal indicative of the intensity of the light source, is exposed to the light source. A second photosensor, which is also capable of delivering a second signal indicative of the intensity of the light source, is also exposed to the light source. Thereafter, the first and second signals are compared, and an error signal is delivered in response to detecting a significant difference between the first and second signals.

Method and apparatus for controlling a stepper

Method for controlling and monitoring light source intensity

In one illustrative embodiment, a system is provided for controlling a lens of an optical system of a stepper. The system comprises the stepper, the optical system, and a controller. The stepper has a light source controllably energizable to provide light to a surface of a semiconductor device. The lens of the optical system has a controllable focus. The controller is capable of determining a temperature of the lens, and controllably varying the focus of the lens in response to the temperature of the lens.

Method and apparatus for controlling optical-parameters in a stepper

A method for processing a semiconductor substrate is presented wherein an alignment mark is formed in an alignment mark area of the semiconductor substrate. The alignment mark area is contained within a window area of the semiconductor substrate. The upper surface of the semiconductor substrate within the window area is recessed below the upper surface of the semiconductor substrate outside of the window area, preferably by exposing the upper surface of the semiconductor substrate within the window area to an etchant. Such recession forms an alignment mark trench within the window area. Being substantially recessed below the original surface of the semiconductor substrate, an alignment mark formed in such a manner may be substantially protected from chemical-mechanical polishing damage during subsequent processing steps.

Method for reducing the susceptibility to chemical-mechanical polishing damage of an alignment mark formed in a semiconductor substrate

A method for detecting a degraded light source is provided. An exposure time associated with the light source is monitored. The exposure time is compared to at least one control limit. A degraded condition is identified based on the exposure time violating the control limit. A processing tool includes a stepper and an automatic process controller. The stepper has a light source and is adapted to illuminate a wafer for an exposure time. The automatic process controller is adapted to monitor the exposure time, compare the exposure time to at least one control limit, and identify a degraded condition based on the exposure time violating the control limit.

Stepper with exposure time monitor

An alignment mark protection structure (,) is disclosed which is used to ensure an integrity of an alignment scheme for a substrate (,) which is to be subjected to lithographic processing. The alignment mark protection structure (,) comprises the substrate (,) and an alignment mark (,) associated with the substrate (,). The alignment mark (,) reflects an alignment light (,) which is then used to determine an optimum alignment between the substrate (,) and a lithographic mask (,). A cap (,) overlies the alignment mark (,) and is substantially transparent with respect to the alignment light (,). The cap (,) protects the underlying alignment mark (,) from lithographic process-induced damage during processing and thus reduces alignment light noise, thereby improving the alignment between a mask (,) and the substrate (,) and minimizing the registration error associated with overlying layers formed on the substrate (,).

Mark protection with transparent film

An automated data management system for enabling the analysis and control of the performance of photolithography steppers in a submicron fabrication facility disclosed. In a preferred embodiments, software running on each of a plurality of first personal computers (PCs), each of which is connected to one of a plurality of steppers, is used to append printer data generated by the steppers responsive to tests, performed therein to ASCII files associated with the steppers and subsequently to upload the ASCII files to a network drive at specified time intervals. Once the ASCII files have been uploaded to the VAX drive, the files may be accessed by a user outside the facility using a second PC on which is running a utility of the present invention for providing automated analysis of the data for a particular stepper as requested by a user. In one aspect of the invention, the utility of the present invention comprises a windows-based user interface for enabling the user to select and initiate analysis procedures by selecting from a variety of options displayed on the user's PC. In another aspect of the invention, the utility of the present invention enables the user to select from among a variety of formats, including browse tables, charts and graphs, for viewing the resulting analysis data.

Automated data management system for analysis and control of

An automated data management system for enabling the analysis and control of the performance of photolithography steppers in a submicron fabrication facility is disclosed. In a preferred embodiments, software running on each of a plurality of first personal computers (PCs), each of which is connected to one of a plurality of steppers, is used to append printer data generated by the steppers responsive to tests performed therein to ASCII files associated with the steppers and subsequently to upload the ASCII files to a network drive at specified time intervals. Once the ASCII files have been uploaded to the VAX drive, the files may be accessed by a user outside the facility using a second PC on which is running a utility of the present invention for providing automated analysis of the data for a particular stepper as requested by a user. In one aspect of the invention, the utility of the present invention comprises a windows-based user interface for enabling the user to select and initiate analysis procedures by selecting from a variety of options displayed on the user's PC. In another aspect of the invention, the utility of the present invention enables the user to select from among a variety of formats, including browse tables, charts and graphs, for viewing the resulting analysis data.

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Austin, TX, United States of America

Richard David Edwards