Versum Materials Us, LLC

Dynaloy, LLC

Eastman Chemical Company

Grupo Petrotemex S.a. De C.v.

Richard Dalton Peters

Travis W Acra

Kimberly Dona Pollard

Spencer Erich Hochstetler

Yuanmei Cao

Mark Edward Stewart

Stephen Weinhold

Frederick Leslie Colhoun

Michael Phenis

Roger Lee Martin

John Cleaon Moore

Michael Tod Phenis

Edward Enns McEntire

Rodney Scott Armentrout

Michael Wayne Quillen

Zachary Philip Lee

Dale Edward O'Dell

Donald James Pfettscher

Darryl W Muck

Michael Duane Cliffton

Joshua Cummins

Meng Guo

Nichelle Maria Gilbert

Michael T Phenis

Improved stripper solutions for removing photoresists from substrates are provided that exhibit improved compatibility with copper, leadfree solder, and epoxy-based molding compounds. The stripper solutions comprise a primary solvent, a secondary glycol ether solvent, potassium hydroxide, and an amine. The solutions also exhibit reduced potassium carbonate crystal formation compared to conventional formulations containing potassium hydroxide, and extended bath life compared to formulations containing tetramethylammonium hydroxide.

Photoresist stripper

Improved stripper solutions for removing photoresists from substrates are provided that typically have freezing points below about 0&#xb0; C. and high loading capacities. The stripper solutions comprise dimethyl sulfoxide, quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulations can additionally contain a secondary solvent. The formulations do not contain tetramethylammonium hydroxide. Methods for use of the stripping solutions are additionally provided.

An organic photoresist stripping composition and method of using the composition with silicon wafers having an insulating layer and metallization on the wafers, having an aryl sulfonic acid or alkylaryl sulfonic acid or mixtures thereof; 1,3-dihydroxybenzene (resorcinol) or sorbitol or mixtures thereof; one or more hydrocarbon solvents having a flash point of greater than about 65&#xb0; C., and optionally less than about 0.5% by weight water based on the total weight of the composition. The composition may also be used for the removal of other materials from other substrates.

Photoresist stripping composition and method

Improved stripper solutions for removing photoresists from substrates are provided that typically have flash points above about 95&#xb0; C. and high loading capacities. The stripper solutions comprise diethylene glycol butyl ether, quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulations can additionally contain a secondary solvent. The formulations do not contain DMSO. Methods for use of the stripping solutions are additionally provided.

The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include a quaternary ammonium hydroxide an amine, and optionally a corrosion inhibitor and/or a sugar alcohol. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the substrate.

Aqueous solution and process for removing substances from substrates

The disclosure is directed solutions and processes to remove substances from substrates. Optionally, the substances can include photoresist on semiconductor wafers. The solution may include a quaternary ammonium hydroxide, a first amine, a second amine, and a third amine with the total amount of amine being no greater than about 95% by weight of a total weight of the solution. Additionally, a solution may include at least one amine, a quaternary ammonium hydroxide, and water and be free of a polar solvent other than water with the solution having a dynamic viscosity that is no greater than about 60 centipoise.

Solutions and processes for removing substances from substrates

The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.

Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices.

Process and composition for removing substances from substrates

Polymer blends suitable for packaging are disclosed that include one or more impact modifiers; and one or more polyethylene terephthalate homopolymers or copolymers obtained by a melt phase polymerization using a catalyst system comprising aluminum atoms in an amount, for example, from about 3 ppm to about 60 ppm and one or more alkaline earth metal atoms, alkali metal atoms, or alkali compound residues in an amount, for example, from about 1 ppm to about 25 ppm, in each case based on the weight of the one or more polyethylene terephthalate homopolymers or copolymers The polymer blends disclosed exhibit improved low temperature toughness compared with blends made using polymers prepared with conventional catalyst systems.

Polyester blends exhibiting low temperature toughness

Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions.

Process for etching metals

Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Processes and compositions for removing substances from substrates

Processess and compositions for removing substances from substrates

Disclosed is a polyester polymer composition comprising at least one polyethylene terephthalate polyester in an amount ranging from 94.0 weight percent to 99.5 weight percent and at least one additive in an amount ranging from 0.5 weight percent to 6 weight percent, each based on the total weight of the polyester composition. The at least one additive comprises a diamide molecule. The composition of the present invention is useful in producing shaped articles such as, for example, sheeting, films, tubes, bottles, preforms, and profiles. These articles can exhibit improved gas barrier properties. The process for making the polymer composition and the shaped articles is also disclosed.

Growing community of inventors

Kingsport, TN, United States of America

Richard Dalton Peters