Agilent Technologies, Inc.

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Avago Technologies General IP (singapore) Pte. Ltd.

Hewlett-packard Company

Avago Technologies International Sales Pte. Limited

Avago Technologies Wireless Ip, Pte. Ltd.

Other

Avago Technologies Fiber IP Pte Ltd.

Avago Wireless IP Pte Ltd

Richard C Ruby

Paul D Bradley

John Dwight Larson, Iii

Stephen Roy Gilbert

Frank Sigming Geefay

Ronald Shane Fazzio

Suresh Sridaran

Michael Louis Frank

Qiang Zou

Donald Lee

Martha K Small

Mark A Unkrich

Tiberiu Jamneala

Yury Oshmyansky

Graham Flower

Hongjun Feng

Wei Pang

Tracy E Bell

Yogesh M Desai

Leslie Ann Field

Domingo A Figueredo

R Shane Fazzio

V K Nagesh

Paul P Merchant

Andrew Thomas Barfknecht

John T Anderson

Kun Wang

Storrs Townsend Hoen

Dariusz Burak

Annette Claire Grot

Young Kwon

Kendra J Gallup

John D Larson

David A Feld

Qing Gan

Christopher Wade

Kristina Lamers

Martha A Johnson

Frank Bi

William Carrol Mueller

Tanya Jegeris Snyder

Carrie Ann Guthrie

Zhiqiang Bi

David Archbold

Chan Hoe Koo

Joo Min Jung

Daniel Bernardo Roitman

Ken A Nishimura

Martin Franosch

Jeremy Alfred Theil

William R Trutna, Jr

Kevin P Killeen

William Richard Trutna

Clinton C Chao

Steven Rosenau

Reed A Parker

Stephen Ellis

Yut Hoong Chow

Chong Hin Chee

Tina L Lamers

Donald R Bradbury

Cheol Hyun Han

Brice Ivira

Joe Wen

Steve Gilbert

Steve Martin

James P Roland

Sergey Mishin

Hongiun Feng

Reed Parker

Donald E Lee

Philip Canfield

Yogesh Desai

Seungku Lee

Joel Alan Philliber

Dominguo Figueredo

John D Iii Larson

A resonator may include a first electrode, a second electrode, and a piezoelectric material between the first electrode and the second electrode, where the piezoelectric material is formed by fabricating the piezoelectric material with a compression axis vector (C-axis vector) oriented along a first direction and applying an electric field across the piezoelectric material to modify a direction of the C-axis vector to be oriented along a second direction. The second direction may be antiparallel to the first direction.

Resonator with intrinsic second harmonic cancellation

A front end radio frequency (RF) module including one or more first filter circuits configured to implement a front end function by filtering first signals communicated between one or more first antenna and a transceiver and one or more second filter circuits configured to implement at least a portion of an additional network function within the front end RF module by filtering second signals communicated between one or more second antennas and the transceiver.

Front end module (FEM) with integrated functionality

The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure.

Acoustic resonator device

Temperature compensation of an acoustic stack is disclosed. A first temperature compensation layer is disposed between a first surface of a substrate and a second surface of a piezoelectric layer; and a second temperature compensation layer is disposed over the plurality of electrodes. A temperature coefficient of frequency (TCF) of the acoustic stack is approximately zero (0.0) over a frequency range of Band 13.

Acoustic wave resonator

An acoustic resonator structure comprises: a substrate comprising a cavity having a plurality of sides; a first electrode disposed over the cavity; a first connection portion that connects to the first electrode over only one side of the plurality of sides of the cavity; a piezoelectric layer disposed over at least a portion of the first electrode; a second electrode disposed over the piezoelectric layer; and a second connection portion that connects to the second electrode over only the one side of the plurality of sides. The second connection portion does not overlap the first connection portion, and a contacting overlap of the first electrode, the piezoelectric layer and the second electrode provides an active area of the acoustic resonator.

Film bulk acoustic wave resonator (FBAR) having stress-relief

An apparatus include a device substrate having an upper surface, and a frame layer having an upper surface. The frame layer is disposed over the upper surface of the device substrate, and a first opening exists in the frame layer. The apparatus also includes a seed layer disposed over the device substrate and substantially bounded by the first opening; and a lid layer having an upper surface. The lid layer is disposed over the upper surface of the frame layer. A second opening exists in the lid layer, and the second opening is aligned with the first opening. The apparatus also includes an electrically and thermally conductive pillar disposed in the first opening and the second opening.

Polymer lid wafer-level package with an electrically and thermally conductive pillar

A surface acoustic wave (SAW) resonator device includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate comprises a bulk region, and a surface region. The surface region has a high trap density, and a reduced carrier mobility, compared to the bulk region. A piezoelectric layer, having a first surface and a second surface, is disposed over the semiconductor substrate. A plurality of electrodes are disposed over the first surface of the piezoelectric layer, and the plurality of electrodes are configured to generate surface acoustic waves in the piezoelectric layer. The SAW resonator device also comprises a layer disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer.

Surface acoustic wave (SAW) resonator having trap-rich region

A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

Composite surface acoustic wave (SAW) device with absorbing layer for suppression of spurious responses

A surface acoustic wave (SAW) resonator device is disclosed. The SAW resonator has a piezoelectric layer disposed over a semiconductor substrate. The piezoelectric layer has a first surface and a second surface. The polarization axis (C-axis) of the piezoelectric layer is oriented at an angle relative to the second surface of the piezoelectric layer in a range of approximately 0&#xb0; to approximately 45&#xb0;. A layer is disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer.

Surface acoustic wave (SAW) resonator

A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the substrate. A plurality of features provided on a surface of the piezoelectric layer reflects acoustic waves and reduces the incidence of spurious modes in the piezoelectric layer.

A multiplexer device includes a single die, at least three acoustic filters and at least one antenna port arranged on the single die, and a shunt inductance connected between each of the at least one antenna port and ground. Each acoustic filter includes one of a transmit or receive filter corresponding to a predetermined radio frequency band. The at least one antenna port is connected to at least one antenna, respectively, where each of the at least one antenna port is further connected to at least one acoustic filter arranged on the single die, and is configured to pass RF signals corresponding to the predetermined RF band of the connected at least one acoustic filter. The shunt inductance provides impedance matching between each of the at least one antenna port and each of the at least one acoustic filter connect to the at least one antenna port.

Acoustic filters integrated into single die

A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 &#x3a9;-cm, and less than approximately 15000 &#x3a9;-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 &#x3bc;m to approximately 30.0 &#x3bc;m, and is substantially without iron (Fe).

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Menlo Park, CA, United States of America

Richard C Ruby