Advanced Micro Devices Corporation

Globalfoundries Inc.

Richard C Nguyen

Cyrus E Tabery

Scott Allan Bell

Richard J Huang

Srikanteswara Dakshina-Murthy

Philip A Fisher

Lu You

David E Brown

A method of forming an integrated circuit includes providing a buffer layer comprising a dielectric material above a layer of conductive material and providing a layer of mask material above the buffer layer. The mask material comprises amorphous carbon. The method also includes removing a portion of the buffer layer and the layer of mask material to form a mask. A feature is formed in the layer of conductive material according to the mask.

Mask for forming integrated circuit

Method for forming integrated circuit

A method of producing an integrated circuit includes providing a layer of polysilicon material above a semiconductor substrate and providing an amorphous carbon layer over the polysilicon material layer. The amorphous carbon layer comprises at least one undoped amorphous carbon layer and at least one doped amorphous carbon layer. A portion of the amorphous carbon layer is removed to form a hard mask, and the polysilicon material layer is etched according to the hard mask to form a line of polysilicon material.

Use of multilayer amorphous carbon ARC stack to eliminate line warpage phenomenon

An exemplary embodiment relates to a method of using an amorphous carbon layer to prevent photoresist poisoning. The method includes doping a first amorphous carbon layer located above a substrate, providing an oxide layer above the first amorphous carbon layer where the oxide layer has a pinhole, and providing a second amorphous carbon layer adjacent to the oxide layer. The second amorphous carbon layer is undoped and the second amorphous carbon layer helps prevent photoresist poisoning.

Method of using amorphous carbon to prevent resist poisoning

A method of using amorphous carbon as spacer material in a disposable spacer process can include forming amorphous carbon spacers at lateral side walls of a gate structure over a substrate, implanting dopants in the substrate to form source and drain regions, ashing away the amorphous carbon spacers, and implanting dopants to form shallow structures in the substrate.

Method of using amorphous carbon as spacer material in a disposable spacer process

A method of forming spaces between polysilicon lines can include patterning structures having top SiON layers and bottom amorphous carbon layers where the structures are located over a polysilicon layer and are separated by a first width, forming amorphous carbon spacers along lateral side walls of the patterned structures, etching apertures into the polysilicon layer not covered by the amorphous carbon spacers and the patterned structures where the apertures in the polysilicon layer between adjacent patterned structures have a second width, and ashing away the amorphous carbon spacers and the patterned structures. The second width is less than the first width.

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Fremont, CA, United States of America

Richard C Nguyen