Saes Getters S.p.a.

Richard C Kullberg

Claudio Boffito

Alessio Corazza

Alessandro Gallitognotta

Michael L Ferris

Andrea Conte

Luca Toia

Sergio Rondena

Johnny Mio Bertolo

Enea Rizzi

Ronald O Petersen

Tim Armstrong

Ronald O'Dell Petersen

A flexible multi-layer getter with a gas-permeable layer covering a gas reservoir layer. In an embodiment, the gas-permeable layer covers part of the gas reservoir layer. In another embodiment, a barrier covers part of the gas reservoir layer. The barrier may include a foil substrate, a passivation layer, or a gas-permeable layer.

Flexible multi-layered getter

Metal getter systems for use in electronic devices are provided. The getter systems taught herein include compartmentalized, metal getter systems for use in electrolytic environments present within electrolytic devices, such as electrolytic capacitors, without the problem of getter passivation. Such systems () can include a composite getter system () inserted into a central portion of an electrolytic capacitor () having a container (), electrodes (), and electrical contacts ().

Metal getter systems

A method for forming a supported thin layer of non-evaporable getter (NEG) material and a getter device formed thereby are provided. A suspension comprised of non-evaporable getter (NEG) material particles in a dispersing medium is prepared. The NEG material particles in the suspension have a particle size not greater than about 150 .mu.m. The dispersing medium has an aqueous, alcoholic, or hydroalcoholic base and contains not more than about 1 wt % of organic compounds having a boiling temperature of at least about 250.degree. C. The ratio of the weight of the NEG material particles to the weight of the dispersing medium is between about 4:1 and about 1:1. A layer of the suspension is deposited on a carrier by a serigraphic technique. Next, the deposited layer is dried to evaporate volatile components of the dispersing medium and thereby form a dried deposit. Finally, the dried deposit is sintered under vacuum at a temperature between about 800.degree. C. and 1000.degree. C. with a surface of the dried deposit covered with a refractory material to inhibit scaling. Getter devices formed in accordance with this method also are provided.

Method for forming supported thin layers of non-evaporable getter

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Colorado Springs, CO, United States of America

Richard C Kullberg