Advanced Micro Devices Corporation

Richard Blish, Ii

Rama Rao Goruganthu

Rosalinda M Ring

Susan Xia Li

Gas-assisted etching (GAE) for integrated circuit dies is enhanced via a method and system that enable halide-assisted etching of dies having copper material. According to an example embodiment of the present invention, an integrated circuit die having copper is etched using a focused ion beam (FIB) and a halide etch gas, such as chlorine. A selected amount of oxygen-containing gas is supplied to the die to react with the halide and prevent the corrosion of exposed copper material in the die. In this manner, the benefits of halide-assisted etching are realized while inhibiting the corrosion of copper that typically occurs with integrated circuit dies having copper material.

Gas-assisted etch with oxygen

The present invention is directed to semiconductor chip analysis involving evaluation of a thickness of material in the chip, for example, as the chip is being thinned. According to an example embodiment of the present invention, a semiconductor die having a buried insulator (BIN) layer between a circuit side that is opposite a back side is analyzed. Light is directed at a selected area at the back side that is over a portion of material that has been reduced in thickness relative to the thickness of an unaltered die. The light has sufficient intensity to pass through the BIN layer and sufficient photon energy to cause the generation of electron-hole pairs in the die on the side of the BIN layer opposite the back side of the die. The electron-hole pairs generate an electrical output from the semiconductor die that is monitored and used to evaluate the thickness of the material.

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Saratoga, CA, United States of America

Richard Blish, Ii