Lucent Technologies Inc.

Agere Systems Inc.

Agere Systems Optoelectronics Guardian Corp.

Agere Systems Guardian Corp.

Triquint Technology Holding Co.

Richard Bendicks Bylsma

Mindaugas Fernand Dautartas

Walter Jeffrey Shakespeare

Carl Edward Gaebe

Robert Louis Hartman

Rudolf Feodor Kazarinov

Gleb E Shtengel

Dominic Paul Rinaudo

Julie Sheridan-Eng

David Alan Ackerman

Thomas L Koch

Gustav Edward Derkits, Jr

Lynn Frances Schneemeyer

Stephen A O'Brien

Leonard Jan-Peter Ketelsen

John M Geary

Daniel Paul Wilt

Venkataraman Swaminathan

Malcolm Ellis Lines

Glen Robert Kowach

Mark Meyers

Rory Keene Schlenker

Sharon K Sputz

William R Heffner

Kaushal Kumar Verma

Lisa Ann Peterson

Mark A Eshelman

Michael Alexandrovich

Ling Cheng

Leonard J-p Ketelsen

A stepped etalon having a top surface and two bottom surfaces that are parallel to the top surface and are each positioned at different distances from the top surface. Each bottom surface has an edge, wherein the edges face one another and a sloping step is positioned between the two edges so that rays from a beam of light projected onto the top surface of the etalon strike the step at the Brewster angle and pass through the etalon without any light being reflected back therein.

Fabry-perot stepped etalon with improved transmittance characteristics

The present invention provides an optical filter module. In one embodiment, the wavelength locker module includes an optical interferometer or filter, such as an etalon. In addition, the wavelength locker module also includes an electrically nonconductive material having a high thermal conductivity substantially surrounding the etalon.

Optical wavelength locker module having a high thermal conductive material

The present invention provides an optoelectronic device, a method of manufacture thereof and an integrated optoelectronic system incorporating the same. The optoelectronic device may be a tunable laser that includes a capacitor located over one of the first outer surface or the second outer surface. The outer metal layers of the tunable laser can be used to form a first electrode of the laser, after which a dielectric layer and a second electrode are deposited and patterned to form the laser having a capacitor incorporated thereon.

Optoelectronic device having an integrated capacitor formed thereon and method of manufacturing the same

The thermo-optic behavior of an optical path over a range of temperatures &Dgr;T is controlled by determining a figure-of-merit (FOM) for the optical path and including in the path a body of crystalline material that enables the conditions specified by the FOM to be satisfied. The crystalline material is highly transparent at a wavelength &lgr; of radiation propagating in the path, and it has a coefficient of thermal expansion (CTE) and a refractive index n such that the CTE and dn/dT are mutually adapted to satisfy the FOM over the range &Dgr;T. In one embodiment, the CTE and dn/dT of an etalon compensate one another so as to perform frequency discrimination that is essentially temperature insensitive over the range &Dgr;T. In a preferred embodiment of the optical etalon the crystalline material comprises LiCaAlF .

Using crystalline materials to control the thermo-optic behavior of an optical path

The invention is a method and apparatus for controlling the wavelength of a first optical component such as a laser. The light from the laser is coupled to a second optical component, such as a modulator, which produces an output which is function of the wavelength of the light and also a function of voltage applied to the second component. The light from the second component is converted to an electrical signal, and the derivative of the amplitude of the signal with respect to voltage is determined. The derivative is used as a basis for an error signal which controls the wavelength of the first component.

Wavelength stabilization of light emitting components

A multi-wavelength etalon suitable for tuning and maintaining the operating frequency of a laser used in an optical communication system is disclosed. The communication system has a representative channel wavelength and a channel spacing. The etalon has a plurality of steps on one of the sides with a step size that is a fraction of the channel spacing. The nominal thickness of the etalon is chosen so that a transmission peak occurs at a wavelength substantially equal to the representative channel wavelength and a next peak occurs at the wavelength of an adjacent channel. The step size is a fraction of the channel separation and is substantially optimized so that a peak or trough in the transmission curve in the region of one step overlaps a steep portion of the transmission curve for one or more other steps.

Controlled multi-wavelength etalon

The invention in one aspect is an optical modulator which includes a waveguide region of semiconductor material. In order to achieve a gradual, essentially linear transfer function, the bandgap of the waveguide region is graded along the direction of light propogation or perpendicular thereto. In accordance with another aspect, the invention is an electroabsorption modulated laser where the portion of the waveguide region defining the modulator has a graded bandgap. In accordance with a method aspect, the waveguide region of the modulator is grown using a mask having a varying width to achieve the graded bandgap.

Modulator for analog applications

The invention relates to semiconductor lasers and more particularly to structures which enable the semiconductor lasers to be tested for reliability. The invention further relates to methods for testing the reliability of semiconductor lasers in wafer or chip form. The invention also relates to methods for the fabrication of semiconductor lasers which includes the use of reliability tests in the fabrication process where the reliability tests includes measuring the voltage drop or drops across one or more levels of a laser structure during the passage of current through the structure.

Semiconductor laser reliability test structure and method

A raised photodetector constructed to define an open channel extending between opposite edges of the photodetector and dimensioned for permitting light from laser to pass therethrough. The photodetector has a light-collecting region disposed in an outward facing wall recessed within the channel for collecting light from the laser.

Raised photodetector with recessed light responsive region

The invention is a laser assembly for reducing distortion ripple. The assembly includes a spherical lens which has a portion of its surface made optically asymmetric to prevent multiple reflections of scattered light within the lens.

Analog laser assembly

The invention is a laser assembly with reduced distortion ripple. The assembly includes a spherical lens for collimating light emitted from the laser. The lens is made of a material which attenuates scattered light which is the source of ripple without appreciably affecting the main beam.

Semiconductor laser assembly with reduced ripple

The invention is a laser with improved turn-on time for digital applications. The low bias capacitance effect of the laser is reduced by use of a buffer region formed between the substrate and the active region, the buffer region having a lower dopant concentration than the substrate.

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Allentown, PA, United States of America

Richard Bendicks Bylsma