Texas Instruments Corporation

Richard B Irwin

Patrick J Jones

Henry Litzmann Edwards

Binghua Hu

Tathagata Chatterjee

Ming-Yeh Chuang

Tony Thanh Phan

Lance Stanford Robertson

Martin B Mollat

Jennifer S Dumin

Fredric D Bailey

Hong-Ryong Kim

Adolfo Anciso

An embodiment of the invention is a Schottky diodehaving a semiconductor substrate, a first metal, a barrier layer, and second metal. Another embodiment of the invention is a method of manufacturing a Schottky diodethat includes providing a semiconductor substrate, forming a barrier layerover the semiconductor substrate, forming a first metal layerover the semiconductor substrate, annealing the semiconductor substrateto form areasof reacted first metal and areasof un-reacted first metal, and removing selected areasof the un-reacted first metal. The method further includes forming a second metal layerover the semiconductor substrateand annealing the semiconductor substrateto form areasof reacted second metal and areasof un-reacted second metal.

Method of manufacturing a dual metal Schottky diode

The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well () within a substrate () and forming a suppression implant () within the substrate (). The method for manufacturing the zener diode may further include forming a cathode () and an anode () within the substrate (), wherein the suppression implant () is located proximate the doped well () and configured to reduce threading dislocations.

Method for reducing dislocation threading using a suppression implant

The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the doped well and configured to reduce threading dislocations.

Dual metal Schottky diode

A method for preparing a sample includes separating a portion of substrate from a sample, performing focused ion beam milling, and removing additional sample material using an etchant.

Site-specific method for large area uniform thickness plan view transmission electron microscopy sample preparation

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Richardson, TX, United States of America

Richard B Irwin