Rfmd (uk) Limited

Filtronic Plc

Richard Alun Davies

Matthew Francis O'Keefe

Robert Grey

Michael Charles Clausen

A compound field effect transistor having multiple pinch-off voltages, comprising first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein. An ohmic contact layer on the semiconductor layer, a source and a drain on the ohmic contact layer, at least one gate on the semiconductor layer between source and drain, at least one gate of the first transistor and one gate of the second transistor being matched gates, each gate having the same effective thickness of electrically conducting layer beneath it, but the gates having different gate lengths.

Field effect transistor having multiple pinch off voltages

A heterojunction bipolar transistor comprising

Transistor

A compound field effect transistor having multiple pinch-off voltages comprising: first and second field effect transistors, each field effect

A III-V field effect transistor comprising

Compound semiconductor substrate for a field effect transistor

A III-V field effect transistor includes a semiconductor channel layer having an electrically conducting channel and an ohmic contact layer on the semiconductor channel layer. The ohmic contact layer has a recess structure disposed therethrough to the semiconductor channel layer. The bottom of the ohmic contact layer includes an etch stop layer including Aluminum and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.

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Darlington, United Kingdom

Richard Alun Davies