Trw Limited

Richard Allison

Alan L Harrington

Vladimir Rodov

Raymond DiBugnara

A zig-zag V-groove configuration for use in V-MOS transistors is disclosed. Instead of merely forming parallel rows of V-grooves, a zig-zag configuration is used, utilizing two different directions for the V-grooves, at least one of which is not the conventional &lt;011&gt; direction. This configuration can be used with either the ladder or interdigitated configuration for the source contact and gate metals.

Zig-zag V-MOS transistor structure

A bipolar semiconductor is manufactured by forming a plurality of grooves along the vertical (111) planes in a high resistivity epitaxial silicon layer which is disposed on an N+ (110) oriented substrate. Low resistivity epitaxial silicon of the same conductivity type is then used to fill in the grooves, thus forming alternate vertical regions of high and low resistivity. A base region is then diffused into said epitaxial layer and a plurality of emitters regions are diffused into said base region at locations directly above the low resistivity epitaxial regions.

Method for manufacture of an interdigitated collector structure

A simplified method of fabricating V-groove junction field effect transistors using only two masking steps. The first masking step opens regions in an ohmic refractory metal layer deposited on a doped semiconductor wafer. V-grooves are anisotropically etched into the wafer through the openings, thereby defining source and drain regions and outer isolation V-grooves. The wafer is then coated with a passivating layer. The second masking step creates openings through the passivation layer to the source and drain regions, and electrical contacts to those regions are made. An ohmic contact to the back surface of the wafer forms the gate electrode. Multiple source and drain regions may be created between the outer isolation V-grooves and electrically parallel for a greater current rating.

Two-mask VJ-FET transistor structure

A method for settling suspended glass particles from a slurry containing small amounts of a substance, which substance is preferentially adsorbed to the surface of the suspended glass particles, and which adsorbed substance facilitates centrifugal sedimentation of the glass particles without substantially altering the colloidal nature of the suspension. In particular, a method for forming a glass film on a semiconductive wafer or circuit, especially mesa etched structures, including the step of adding a small amount of hydrogen peroxide to the glass slurry before sedimentation of the glass film.

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Los Angeles, CA, United States of America

Richard Allison