International Business Machines Corporation

Globalfoundries Inc.

Richard Alan Haight

James Bowler Hannon

Talia S Gershon

Alfred Wagner

Teodor Krassimirov Todorov

Peter P Longo

Priscilla D Antunez

Oki Gunawan

Supratik Guha

Rudolf M Tromp

Yun Seog Lee

Satoshi Oida

Arthur Wood Ellis

Matthew Warren Copel

Jeehwan Kim

Stephen Mark Rossnagel

Martin O Sandberg

Vivekananda P Adiga

Michael Straight Hibbs

Daniel Peter Morris

Timothy E Neary

Dennis A Schmidt

Jacek G Smolinski

Saurabh Singh

Dennis M Hayden

Brian J Grenon

Raymond E Rochefort

J Peter Levin

Takashi Ando

Kisik Choi

Tayfun Gokmen

David Brian Mitzi

Hanhee Paik

Nestor A Bojarczuk, Jr

Mark T Winkler

Ravin Mankad

Vijay Narayanan

Ali Afzali-Ardakani

Douglas M Bishop

Ronald R Troutman

Bruce A Ek

Gloria W Fraczak

Liang-Yi Chang

Theodore Gerard Van Kessel

Michael Patrick Chudzik

Russell Alan Budd

Yves Corfield Martin

Eduard Albert Cartier

Vamsi Krishna Paruchuri

Fenton Read McFeely

Ali Afzali-ardakani

Nestor Alexander Bojarczuk, Jr

Marinus Hopstaken

Martin Patrick O'Boyle

Mark C Reuter

George Liang-Tai Chiu

Joseph M Karasinski

Devices, methods, and/or computer-implemented methods that can facilitate formation of a self assembled monolayer on a quantum device are provided. According to an embodiment, a device can comprise a qubit formed on a substrate. The device can further comprise a self assembled monolayer formed on the qubit.

Self assembled monolayer formed on a quantum device

Techniques regarding encapsulating one or more superconducting devices of a quantum processor are provided. For example, one or more embodiments described herein can regard a method that can comprise depositing a metal fluoride layer onto a superconducting resonator and a silicon substrate that can be comprised within a quantum processor. The superconducting resonator can be positioned on the silicon substrate. Also, the metal fluoride layer can coat the superconducting resonator.

Metal fluoride encapsulation of superconducting devices

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

Hybrid CZTSSe photovoltaic device

Photovoltaic structures having multiple absorber layers separated by a diffusion barrier are provided. In one aspect, a method of forming an absorber on a substrate includes: depositing a first layer of light absorbing material on the substrate; depositing a diffusion barrier; depositing a second layer of light absorbing material on the diffusion barrier, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material; and annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing. A solar cell and method for formation thereof are also provided.

Photovoltaic structures having multiple absorber layers separated by a diffusion barrier

Techniques regarding encapsulating one or more superconducting devices of a quantum processor are provided. For example, one or more embodiments described herein can regard a method that can comprise depositing an adhesion layer onto a superconducting resonator and a silicon substrate that are comprised within a quantum processor. The superconducting resonator can be positioned on the silicon substrate. Also, the adhesion layer can comprise a chemical compound having a thiol functional group.

Adhesion layer to enhance encapsulation of superconducting devices

A force detector and method for using the same include a lens and a cantilever below the lens. A laser above the lens is configured to emit a beam of light that reflects from a surface of the lens and the cantilever. A processor is configured to determine a force between the lens and the cantilever based on interference between the light reflected from the surface and the light reflected from the cantilever.

Surface force apparatus based on a spherical lens

Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.

High work function MoO2 back contacts for improved solar cell performance

An integrated kesterite (e.g., CZT(S,Se)) photovoltaic device and battery is provided. In one aspect, a method of forming an integrated photovoltaic device and battery includes: forming a photovoltaic device having a substrate, an electrically conductive layer, an absorber layer, a buffer layer, a transparent front contact, and a metal grid; removing the substrate and the electrically conductive layer from the photovoltaic device to expose a backside surface of the absorber layer; forming at least one back contact on the backside surface of the absorber layer; and integrating the photovoltaic device with a battery, wherein the integrating includes connecting i) a positive contact of the battery with the back contact on the backside surface of the absorber layer and ii) a negative contact of the battery with the metal grid on the transparent front contact. An integrated photovoltaic device and battery is also provided.

Integrated CZT(S,Se) photovoltaic device and battery

Silver-containing absorbers for photovoltaic devices and techniques for fabrication thereof are provided. In one aspect, a method of forming an ink includes: mixing a silver halide and a solvent to form a first solution; mixing a metal, sulfur, and the solvent to form a second solution; combining the first solution and the second solution to form a precursor solution; and adding constituent components for an absorber material to the precursor solution to form the ink. Methods of forming an absorber film, a photovoltaic device, and the resulting photovoltaic device are also provided.

Solution-phase inclusion of silver into chalcogenide semiconductor inks

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

Chalcogen back surface field layer

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu&#x2014;Zn&#x2014;Sn&#x2014;S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Thin film CZTSSe photovoltaic device

A force detector and method for using the same includes a lens. A cantilever is disposed below the movable lens. A laser is disposed above the movable lens and is configured to emit a beam of light that reflects from a surface of the lens and the cantilever. A processor is configured to determine a force between the movable lens and the cantilever based on a change in phase in images produced by the light reflected from the spherical surface and the light reflected from the cantilever.

High work function MoOback contacts for improved solar cell performance

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Mahopac, NY, United States of America

Richard Alan Haight