Honeywell International Inc.

Other

Alliedsignal Inc.

Richard A Spear

Nigel P Hacker

Teresa Baldwin

Joseph T Kennedy

Todd Allen Krajewski

Hui-Jung Wu

James S Drage

Mary Richey

Helen Xiao Xu

Lea M Metin

Joseph P Kennedy

Anil Shriram Bhanap

Edward W Rutter, Jr

Roger Yu-Kwan Leung

Wenya Fan

Ahila Krishnamoorthy

Ligui Zhou

Amanuel Gebrebrhan

Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.

Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions

Crosslinkable compositions are disclosed herein that comprise at least one silicon-based material comprising at least one alkyl group and at least one aryl or aromatic group, at least one catalyst, and at least one solvent.

Compositions, layers and films for optoelectronic devices, methods of production and uses thereof

Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants are provided herein. In an embodiment, a borate ester comprises boron and silicon wherein the boron is linked to the silicon by alkyl groups that are bonded via ester bonds with both the boron and the silicon. A method of fabricating a boron-comprising dopant comprises providing a borate and transesterifying the borate using a polyol-substituted silicon monomer.

Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants

Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Spin-on-glass anti-reflective coatings for photolithography

Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.

An absorbing ether-like compound including a siliconethoxy, silicondiethoxy, or silicontriethoxy species attached to a naphthalene or anthracene chromophore via an oxygen linkage is used as an organic light-absorbing compound. The absorbing ether-like compound is incorporated into spin-on glass materials to provide anti-reflective coating materials for deep ultraviolet photolithography. A method of synthesizing the light-absorbing ether compounds is based on the reaction of an alcohol-substituted chromophore with an acetoxysilicon compound in the presence of alcohol. A method of making absorbing spin-on-glass materials including the absorbing ether-like compounds is also provided.

Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography

Anti-reflective coating materials for ultraviolet photolithography include at least one organic light-absorbing compound incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining at least one organic absorbing compound with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

A process for forming a planarization film on a substrate that does not smoke or fume on heating includes applying a polymeric solution including a novolac resin having a weight average molecular weight between about 1000 and 3000 amu, which has been fractionated to remove molecules with molecular weight below about 350 amu, a surfactant selected from a group consisting of a non-fluorinated hydrocarbon, a fluorinated hydrocarbon and combinations thereof, and an optional organic solvent to a substrate, followed by heating the substrate.

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Santa Cruz, CA, United States of America

Richard A Spear