Carl Zeiss Microscopy Gmbh

Other

Tokyo Electron Limited

Veeco Instruments Inc.

Alis Corporation

Richard A Comunale

John Anthony Notte, Iv

Billy W Ward

Randall G Percival

Alexander Groholski

Alexander I Gurary

Raymond Hill

Louis S Farkas, Iii

John D Pollock

Shawn McVey

Johannes Bihr

Brian D Bassett

Louise Smith Barriss

Robert White Milgate

Roger P Fremgen

Todd A Luse

John E Ivory

Zaki Saleh

Iii Robert White Milgate

John A Notte Iv

John A Iv Notte

Louis S Farkas Iii

A Colin Sanford

Brian Bassett

A John Notte

This disclosure provides systems, methods and apparatus systems and methods described herein provide, among other things, a system for additive manufacturing of metal objects. The system includes two electron beams. In one optional implementation, one beam is high powered and acts as a deposition beam that melts a metal feed stock material which is delivered to a deposition zone and onto a work surface and the second electron beam is a low power electron source. The second electron beam acts as an interrogating source that generates an electron beam which interacts with the deposited material. The second electron beam may be active after material is deposited and provides post-deposition in-situ metrology. Various signals generated by this second beam/material interaction are collected and used to provide information about the melted and deposited material.

Additive metal manufacturing system for in-situ metrology and process control

A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.

Rotating disk reactor with ferrofluid seal for chemical vapor deposition

Ion sources, systems and methods are disclosed. In some embodiments, the ion sources, systems and methods can exhibit relatively little undesired vibration and/or can sufficiently dampen undesired vibration. This can enhance performance (e.g., increase reliability, stability and the like). In certain embodiments, the ion sources, systems and methods can enhance the ability to make tips having desired physical attributes (e.g., the number of atoms on the apex of the tip). This can enhance performance (e.g., increase reliability, stability and the like).

Ion sources, systems and methods

Ion sources, systems and methods are disclosed.

Chlorine trifluoride (ClF,) is an excellent chemistry for in-situ cleaning of process equipment for chemical vapor deposition (CVD) of metals. ClF,is a weakly-bound molecule that breaks down exothermically on contact with most hot conducting films such as Ti and TiN without plasma, giving it an advantage over other chemistries. The energy released from the reaction is used to volatize the reaction byproducts. Cooler reactor surfaces, however, are coated with a halogen-rich, less conductive film that may not be as reactive with ClF,. To improve the ClF,reaction, additives such as nitrous dioxide are employed. These additives react with ClF,and supply reactive ions energetic enough to volatize the byproduct.

Systems and methods for dry cleaning process chambers

Growing community of inventors

Ipswich, MA, United States of America

Richard A Comunale