Infineon Technologies Austria Ag

Infineon Technologies Ag

Riccardo Pittassi

Giuseppe Bernacchia

Joachim Mahler

Josef Hoeglauer

Frank Daeche

Henrik Ewe

Anton Prueckl

Oliver Blank

A semiconductor device includes a main transistor and a sense transistor. The main transistor is disposed in a semiconductor body and includes a plurality of sections which are individually controllable via separate gate electrodes disposed above the semiconductor body. The sense transistor is disposed in the same semiconductor body as the main transistor and has the same number of individually controllable sections as the main transistor. Each individually controllable section of the sense transistor is configured to mirror current flowing through one of the individually controllable sections of the main transistor and is connected to the same gate electrode as that individually controllable section of the main transistor. An electronic circuit that includes the semiconductor device and a current sense circuit that outputs a current sense signal representing the current mirrored by the sense transistor is also provided.

Scalable current sense transistor

Various embodiments provide a chip package. The chip package may include a metallic chip carrier; at least one chip carried by the metallic chip carrier; encapsulation material encapsulating the at least one chip and the metallic chip carrier; and a plurality of redistribution layers disposed over the at least one chip opposite the metallic chip carrier, wherein at least one redistribution layer of the plurality of redistribution layers is electrically coupled with the at least one chip.

Chip package and method for manufacturing the same

A switching converter according includes a control arrangement to furnish a control signal dependent on the output voltage, as well as a first and at least one second converter stage. Each converter includes an inductive storage element, a ramp signal generator to furnish a signal having a ramp slope, a pulse width modulator which receives the control signal and the ramplike signal and which furnishes a pulse width modulated signal, and a driver circuit which receives the pulse width modulated signal and the input voltage and which applies the input voltage to the inductive storage element depending on the pulse width modulated signal. The ramp slope of the ramplike signal of the at least one second converter stage is adjustable. The ramp signal generator of the second converter stage receives a calibration signal which depends on the inductance of the inductive storage element of the first converter stage.

Switching converter with plural converter stages having calibrated current uptake

A switching converter includes a control arrangement and multiple converter stages. The control arrangement generates a control signal dependent on the output voltage. Each converter stage includes an inductive storage element, a current measurement arrangement that detects a current across the inductive storage element and furnishes a current measuring signal proportional to this current, a pulse width modulator that receives the control signal and the current measuring signal and generates a PWM signal, and a driver circuit that applies the input voltage to the inductive storage element in dependence on the PWM signal. The current measurement arrangement of a second converter stage adjusts a proportionality factor between the current across the inductive storage element and the current measurement signal thereof, responsive to an adjustment signal that is dependent on a proportionality factor between a current across the inductive storage element and the current measuring signal of a first converter stage.

Growing community of inventors

Villach, Austria

Riccardo Pittassi