Inl-international Iberian Nanotechnology Laboratory

International Iberian Nanotechnology Laboratory (inl)

Ricardo Alexandre De Matos Antunes Ferreira

Elvira Pérez De Colosia Paz

Elvira Paz Pérez De Colosía

Alex Jenkins

Tim Böhnert

A method and a device for non-invasive vibration-based condition monitoring of a machine placed on a physical frame of reference, using a time-domain broadband magnetoresistive sensor having a sensor transfer function of electric resistance versus magnetic field intensity, said machine comprising an attached magnet or a magnetic part; comprising the steps of: placing the magnetic sensor on said physical frame of reference at a distance from the machine and at a predetermined distance from the magnet or magnetic part, such that the magnetoresistive sensor is operating in a dynamic part of the sensor transfer function in respect of the magnetic field produced by the magnet or a magnetic part; capturing a time-domain magnetic field signal transduced by the sensor; and using an electronic data processor to process the captured signal to obtain a vibration-based indicator of the machine's condition.

Method and system for non-invasive vibration-based condition monitoring of a machine

A frequency sensor is provided. The frequency sensor may include: a magnetoresistive nano-oscillator including a magnetic heterostructure of at least a magnetic free layer, a magnetic reference layer and a non-magnetic intermediate layer arranged between the magnetic free layer and the magnetic reference layer; a coupling arrangement for coupling an incoming signal to at least one magnetic mode of the magnetic free layer, and a frequency estimator. The frequency estimator may be configured to: perform a plurality of voltage measurements across the magnetoresistive nano-oscillator over time; calculate a time averaged voltage across the magnetoresistive nano-oscillator based on the plurality of voltage measurements; estimate, over a finite range of frequencies, a frequency of the incoming signal based on the calculated time averaged voltage, and output a signal representative of the estimated frequency. A method of estimating a frequency of an incoming signal is also provided.

Frequency sensor

A magnetoresistive sensor is provided. The magnetoresistive sensor comprises a magnetic sensing layer, a magnetic reference layer, and a tunnel barrier layer between the magnetic sensing layer and the magnetic reference layer. The magnetoresistive sensor also comprises a sensing exchange layer having a layer of anti-ferromagnetic material. The sensing exchange layer is exchange coupled with the magnetic sensing layer. Also, the magnetoresistive sensor still further comprises a reference exchange layer having a layer of anti-ferromagnetic material. The reference exchange layer is exchange coupled with the magnetic reference layer. Moreover, the magnetoresistive sensor is configured such that in the absence of an external magnetic field, an exchange bias pinning the reference layer lies along a reference direction, an exchange bias pinning the sensing layer lies along a first direction that is orthogonal to the reference direction, and a magnetic anisotropy of the sensing layer is parallel to the first direction.

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Braga, Portugal

Ricardo Alexandre De Matos Antunes Ferreira