General Electric Company

Boe Technology Group Co., Ltd.

General Electronics Company

Ri-an Zhao

Jie Jerry Liu

Xiaolei Shi

Min Yan

Aaron Judy Couture

Victor Petrovich Ostroverkhov

Peter William Lorraine

Weijun Yin

Kelly Scott Chichak

Gautam Parthasarathy

Srinivas Prasad Sista

Kevin Henry Janora

Larry Gene Turner

Kwang Hyup An

Jeffrey Michael Youmans

Anil Raj Duggal

Yang Cao

Eugene Pauling Boden

Paul Alan McConnelee

Arun Virupaksha Gowda

Kwok Pong Chan

James William Bray

William Andrew Hennessy

Kaustubh Ravindra Nagarkar

Shakti Singh Chauhan

George Theodore Dalakos

Dennis Joseph Coyle

Daniel Qi Tan

Christian Maria Anton Heller

Qin Chen

Stefan Rakuff

Faisal Razi Ahmad

Guatam Parthasarathy

Ahmet Gün Erlat

Oleg Sulima

Kwang-Hyup An

Paul Alan Mcconnelee

A flexible organic X-ray detector, an imaging system including the flexible organic detector and methods for fabricating a flexible organic X-ray detector having a layered structure are presented. The detector includes a flexible substrate and a thin glass substrate operatively coupled to the flexible substrate. Further, the detector includes a thin film transistor array disposed on the thin glass substrate. Additionally, the detector includes an organic photodiode including one or more layers disposed on the thin film transistor array. Moreover, the detector includes a scintillator layer disposed on the organic photodiode.

Flexible X-ray detector and methods for fabricating the same

Imaging panels and imaging systems that may employ use organic photodiodes or other continuous sensors are discussed. The detector panels discussed may have a non-pixelated organic photodiode disposed above a pixelated backplane. In some embodiments, the sensor panels may also include dielectric structures that create buried vias in the region of contact between the organic photodiode and the thin film transistor (TFT) backplane. In some embodiments, the sensor panels may include dielectric structures that separate neighboring pixels. The dielectric structures may decrease thickness inhomogeneity in active areas of the organic photodiode. Detector panels discussed herein may have decreased sensing lag and current leakage, and improved reliability. Methods for formation of organic photodiodes and of dielectric structures are also discussed.

Organic photodiode pixel for image detectors

A process for fabricating an organic x-ray detector is presented. The process includes forming a layered structure that includes disposing a first electrode layer on a thin film transistor array, disposing an organic photoactive layer on the first electrode layer and disposing a second electrode layer on the organic photoactive layer. The organic photoactive layer includes a fullerene or a fullerene derivative having a carbon cluster of at least 70 carbon atoms. The process further includes disposing a scintillator layer on the layered structure at a temperature greater than 50 degrees Celsius. An organic x-ray detector fabricated by the process is further presented. An x-ray system including the organic x-ray detector is also presented.

Processes for fabricating organic X-ray detectors, related organic X-ray detectors and systems

An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an organic photodiode layer disposed on the TFT array, a barrier layer disposed on the photodiode layer, and a scintillator layer disposed on the barrier layer, such that the barrier layer includes at least one inorganic material.

Organic X-ray detector with barrier layer

A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.

Hybrid dielectric film for high temperature application

Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

OLED devices with internal outcoupling

A surface-mount package structure for reducing the ingress of moisture and gases thereto is disclosed. The surface-mount structure includes a sub-module having a dielectric layer, semiconductor devices attached to the dielectric layer, a first level interconnect structure electrically coupled to the semiconductor devices, and a second level I/O connection electrically coupled to the first level interconnect and formed on the dielectric layer, with the second level I/O connection configured to connect the sub-module to an external circuit. The semiconductor devices of the sub-module are attached to a substrate structure, with a dielectric material positioned between the dielectric layer and the substrate structure to fill in gaps in the surface-mount structure. A diffusion barrier layer is applied over the sub-module, adjacent the first and second level I/O connections, and extends down to the substrate structure to reduce the ingress of moisture and gases from a surrounding environment into the surface-mount structure.

Diffusion barrier for surface mount modules

A radiation detector assembly including an organic photodetector that generate charge in response to an incident radiation, a thin film transistor array including a plurality of pixels. The plurality of pixels may produce electric signals corresponding to the charge generated by the organic photodetector. The radiation detector assembly also includes a spacer disposed on the thin film transistor array. The spacer surrounds one or more pixels and may confine the organic photodetector within the surrounded one or more pixels such that the surrounded one or more pixels are electrically isolated from a neighboring pixel.

Method of manufacturing photodiode detectors

Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

A component includes a micro-hologram layer, where the micro-hologram layer includes layers inert to light interleaved with layers of functional film. The functional film layers are made of a material that undergoes a change in its refractive index when illuminated by a light beam, yet undergoes no change in its refractive index when illuminated by a different light beam. The components may further include interleaved spacer films with multiple micro-hologram layers and other elements (e.g., servo layer, coatings, and the like) so as to comprise a data storage device. Methods of manufacturing the component and device are also disclosed.

Stacked film threshold component, device, and method of manufacture

A data storage device includes a substrate layer, made of a moldable non-photopolymer plastic substrate and having a servo layer, adjoined to a stacked film structure that is constructed of multiple functional films, having data layers, with spacer film(s) disposed between each of the functional films. Methods of manufacturing the data storage device include using a roll-to-roll system to adhere thin spacer film extrusions between the multiple functional film extrusions so as to construct the stacked film structure. An additional method uses an application of functional film coating to thin spacer films and a roll-to-roll system.

Stacked film optical data storage device and method of manufacture

A method of processing a multilayer film is provided. The method includes providing a substrate film having a substrate film first surface and a substrate film second surface. The method also includes providing a barrier layer adjacent to the substrate film second surface. The barrier layer has at least one opening allowing fluid communication between the substrate film and an outer surface of the barrier layer. Further, the method includes contacting the substrate film first surface with a first reactant and finally contacting the outer surface of the barrier layer with a second reactant, said second reactant being reactive with said first reactant. The method of contacting the substrate film first surface to the first reactant and contacting the outer surface of the barrier layer to the second reactant is carried out under conditions under which reaction between said first reactant and the second reactant results in a formation of a reaction layer.

Method of processing multilayer film

Present invention provides a film and an article including the film. The film includes first layer, second layer and third layer. The first layer includes a polymer dielectric material. The second layer is disposed on at least one surface of the first layer and includes inorganic oxide dielectric material. The third layer is disposed on the first or second layer and includes a nitride or oxynitride material.

Coated polymer dielectric film

A method includes supplying current to at least one photovoltaic device via a current source and detecting emitted photon radiations from the at least one photovoltaic device via a radiation detector. The method also includes outputting a signal corresponding to the detected emitted photon radiations from the radiation detector to a processor device, and processing the signal corresponding to the detected emitted photon radiations via the processor device to generate one or more two-dimensional photon images. The method further includes analyzing the one or more two-dimensional photon images to determine at least one defect in the at least one photovoltaic device.

Growing community of inventors

Niskayuna, NY, United States of America

Ri-an Zhao