Other

The Texas A&m University System

Qatar University

Reza Nekovei

Mahmoud M Khader

Amit Verma

Manjeri P Anantram

Aditya Chandra Sai Ratcha

Md Golam Rabbani

A photodetector cell may include a substrate, and a first contact carried by the substrate and having a first work function value. The photodetector cell may include a second contact carried by the substrate and having a second work function value different from the first work function value, and a semiconductor wire carried by the substrate and having a third work function value between the first and second work function values. The semiconductor wire may be coupled between the first and second contacts and comprising a photodiode junction.

Photodetector cell and solar panel with dual metal contacts and related methods

Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.

Method for fabricating a heterojunction schottky gate bipolar transistor

Heterojunction schottky gate bipolar transistor

Growing community of inventors

Corpus Christi, TX, United States of America

Reza Nekovei