Broadcom Corporation

Reza Khan

Sam Ziqun Zhao

Leonard Dauphinee

Young J Shin

Edward Law

Massimo Brandolini

Chonghua Zhong

Dongsoo Daniel Koh

Jianhong Xiao

Ray (Ramon) Gomez

Ming Wang Sze

Galen Kirkpatrick

A semiconductor package includes a semiconductor unit containing an active circuitry layer. The semiconductor package also includes a plurality of bonding pads on the active circuitry layer, which are configured to be connected to corresponding external conductive connectors. The semiconductor package also includes a protective sealant coating filling grooved edges of the active circuitry layer. The protective sealant coating contains an exterior wafer-singulated surface.

Semiconductor border protection sealant

Embodiments provide transmitter topologies that improve the power efficiency and bandwidth of RF transmitters for high transmission power applications. In an embodiment, the common-emitter/source PA of conventional topologies is replaced with a current-input common-base/gate PA, which is stacked on top on an open-collector/drain current-output transmitter. The common-base/gate PA protects the output of the transmitter from large output voltage swings. The low input impedance of the common-base/gate PA makes the PA less susceptible to frequency roll-off, even in the presence of large parasitic capacitance produced by the transmitter. At the same time, the low input impedance of the common-base/gate PA reduces the voltage swing at the transmitter output and prevents the transmitter output from being compressed or modulated. In an embodiment, the DC output current of the transmitter is reused to bias the PA, which results in power savings compared to conventional transmitter topologies.

Wideband power efficient high transmission power radio frequency (RF) transmitter

Growing community of inventors

Irvine, CA, United States of America

Reza Khan