Nexperia B.v.

Reza Behtash

Tim Boettcher

Thomas Igel-Holtzendorff

Linpei Zhu

A semiconductor arrangement comprising a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench and coat the first trench, the field plate layer having a thickness such that it defines a second trench within the first trench, a barrier layer arranged to coat an internal surface of the second trench; and a trench fill material configured to substantially planarize the first and second trenches.

Semiconductor arrangement

A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.

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Hamburg, Germany

Reza Behtash