Tokuyama Corporation

Reo Yamamoto

Yuichiro Minabe

Yoshihide Kamiyama

Yoshihiko Numata

Mitsutoshi Hikasa

Masayuki Fukuda

Yasuko Takeda

Hiroki Yokoyama

Provided are a method of cleaning a group III nitride single crystal substrate which enables the roughness of a nitrogen-polar face of the group III nitride single crystal substrate to be suppressed to remove foreign substances, and a method of producing a group III nitride single crystal substrate. The method of cleaning a group III nitride single crystal substrate having a group III element-polar face, and the nitrogen-polar face opposite the group III element-polar face includes: cleaning the nitrogen-polar face with a detergent including a fluoroorganic compound.

Method of cleaning a group III-nitride single crystal substrate comprising cleaning a nitrogen-polar face with a detergent including a fluoroorganic compound

A substrate for device bonding includes a substrate having an electrode layer and a solder layer formed on the electrode layer, wherein the solder layer is a Pb-free solder layer which comprises (1) a base metal composed of (i) Sn, (ii) Sn and Au, or (iii) In, (2) at least one metal selected from the group consisting of Bi, In (only in the case where the base metal is Sn, or Sn and Au), Zn, Au (only in the case where the base metal is In) and Sb, and (3) at least one metal selected from the group consisting of Ag, Ni, Fe, Al, Cu and Pt, and the solder layer has a thickness of 1 to 15 &#x3bc;m and a surface roughness (Ra) of not more than 0.11 &#x3bc;m.

Substrate for device bonding, device bonded substrate, and method for producing same

A sintered aluminum nitride substrate which has a via hole and an internal electrically conductive layer, having high thermal conductivity and high adhesion strength between the sintered aluminum nitride substrate and the internal electrically conductive layer or the via hole and having other excellent properties. The substrate comprising an internal electrically conductive layer, at least one electrically conductive via hole formed between the internal electrically conductive layer and at least one surface of the substrate, wherein the thermal conductivity of the aluminum nitride sintering product at 25&deg; C. is 190 W/mK or more, and the adhesion strength between the aluminum nitride sintering product and the internal electrically conductive layer is 5.0 kg/mm or more.

Substrate and production method therefor

A sintered aluminum nitride having satisfactorily densified via holes, which is free from cracking and has an excellent appearance, is produced through firing an aluminum nitride molding having at least one highly isolated through-hole for via hole formation. At least one through-hole for formation of dummy via holes not used for electrical connection is formed around the highly isolated through-hole for via hole formation, and the through-hole for dummy via hole formation is also filled with a conductive paste. Thereafter, the aluminum nitride molding is fired into the sintered aluminum nitride.

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Tokuyama, Japan

Reo Yamamoto