Agc Inc.

Asahi Glass Company, Limited

Reo Usui

Koji Nakagawa

Kenichi Ebata

Ryohei Satoh

Kenji Tanaka

Satoru Takaki

Hiroshi Sakamoto

Kazutaka Ono

Toshio Suzuki

Atsushi Seki

Yukihiro Tao

Jun Akiyama

Yumiko Aoki

Hiroaki Iwaoka

Yuki Aoshima

Hidefumi Odaka

Tomomi Abe

Takatoshi Yaoita

Takeshi Tomizawa

Yoshinori Iwata

Kousuke Chonan

Eiji Morinaga

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100&#xb0; C./hour and to a heat treatment at 600&#xb0; C. for 80 minutes, and then to a cooling to the room temperature at 100&#xb0; C./hour.

Carrier substrate, laminate, and method for manufacturing electronic device

A vehicular laminated glass in which a plurality of glass plates and an intermediate film disposed between the plurality of glass plates are stacked. The vehicular laminated glass includes a first region having a colored layer disposed along an upper edge of the vehicular laminated glass with reference to an orientation of a vehicle to which the vehicular laminated glass is attached, and a second region disposed lower than the first region. The first region includes a region A having a light scattering layer and a region B not having the light scattering layer. In the region A, a visible light transmittance is 0.7% to 32%, a visible light reflectance is 0.5% to 10%, a vehicle-inner side visible light diffuse reflectance is 3% to 45%, and the light scattering layer is arranged at a vehicle-inner side relative to the colored layer.

Vehicular laminated glass

A substrate with conductive film includes a base material; and a film of a conductive metal oxide arranged on an upper part of the base material. The film includes, by a top plan view, a first region and a second region, the second region is configured of a same material as the first region, and an electric resistance of the second region is higher than an electric resistance of the first region. The second region includes a part configured by a plurality of cellular sections surrounded by a plurality of fine cracks. In the part, each fine crack has a width of 1 nm to 50 nm, and each cellular section has a largest measure of less than 10 &#x3bc;m.

Substrate with conductive film

The present invention relates to a method for forming a TiOthin film on a substrate by using an atmospheric pressure CVD method, in which a raw material gas contains titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400&#xb0; C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)).

Thin film formation method, thin film, and glass plate having thin film attached thereto

A method for manufacturing a circuit pattern-provided substrate including forming a resist layer on a substrate, forming an opening corresponding to a circuit pattern and having an eaves cross-sectional shape in the resist layer, forming a thin film layer having a portion formed on the substrate in the opening and a portion formed on the resist layer, and removing the resist layer such that the resist layer and the portion of the thin film layer formed on the resist layer are removed from the substrate. The forming of the opening comprises exposing the resist layer with a mask device which changes an exposure amount of the resist layer such that the eaves cross-sectional shape has a space at a boundary between the resist layer and the substrate.

Method for manufacturing circuit pattern-provided substrate

A process for producing a glass substrate having a circuit pattern is disclosed. The process includes forming a thin film layer on a glass substrate and then irradiating the thin film layer with laser light to form a circuit pattern on the glass substrate; depositing a low-melting point glass having a softening point of fromto&#xb0; C. on the glass substrate having the circuit pattern formed thereon; and sintering the low-melting point glass to form a low-melting point glass layer which includes the low-melting point glass sintered on the glass substrate having the circuit pattern formed thereon and which forms a compatible layer between the glass substrate and the low-melting point glass layer.

Glass substrate having circuit pattern and process for producing the same

There is provided a method for forming a continuous thin film circuit pattern with good precision, at low cost and with low environmental burden; an electronic circuit fabricated by the same, and an electronic device including the same. There are a step for forming a mask layeron a substrate; a step for forming an opening pattern in the mask layer; a step for forming a thin filmon the substrateand on the mask layer; and a step for removing, from the substrate, the mask layerand a portion of the thin filmformed on the mask layer; wherein the opening pattern is formed under a dry condition.

Pattern formation method, electronic circuit manufactured by the same, and electronic device using the same

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Tokyo, Japan

Reo Usui