Asm IP Holding B.v.

René Vervuurt

Takashi Yoshida

Viljami J Pore

Timothee Blanquart

Jihee Jeon

Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.

Method for forming metal silicon oxide and metal silicon oxynitride layers

Methods for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen. The gap filling fluid can be formed by introducing a precursor into the reaction chamber and introducing a co-reactant into the reaction chamber to form a gap filling fluid that at least partially fills the gap.

Growing community of inventors

Leuven, Belgium

René Vervuurt