Xidian University

Renxu Jia

Yuming Zhang

Lei Yuan

Yucheng Wang

Tiqiang Pang

Hongpeng Zhang

A method for manufacturing an ultraviolet photodetector based on GaOmaterial are provided. The method includes: selecting a substrate; forming a GaOlayer on an upper surface of the substrate; forming a top electrode on the GaOlayer; and forming a bottom electrode on a lower surface of the substrate. GaOmaterial is adopted, with a light transmittance in the solar blind area can reach 80% or even 90%. The GaOmaterial is suitable for application to a light absorbing layer, and its transparent conductive electrical properties are also beneficial to improve the light absorption capacity of the light absorbing layer, thereby greatly improving the device performance of the photodetector diode.

Method for manufacturing ultraviolet photodetector based on Ga2O3 material

A method for manufacturing a HEMT/HHMT device based on CHNHPbImaterial are provided. The method includes: selecting an AlOsubstrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the AlOsubstrate not covered by the source electrode and the drain electrode; manufacturing CHNHPbImaterial on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.

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Xi'an, China

Renxu Jia