Lsi Logic Corporation

Rennie G Barber

Michael J Berman

Steven E Reder

George Edward Bailey

Mark Mayeda

A method of detecting contamination on a backside of a semiconductor wafer includes the steps of positioning the backside of the wafer in contact with a detection surface of a contaminant sensor, and detecting deformation of the detection surface of the contaminant sensor. The contaminant sensor may be incorporated into a fabrication device such as a wafer handling device, or can be utilized in the construction of a stand-alone device. An apparatus for detecting contamination on the backside of a semiconductor wafer is also disclosed.

Method and apparatus for detecting backside contamination during fabrication of a semiconductor wafer

A system and method are presented for neutralizing the electric charge binding a semiconductor wafer to an electrostatic chuck. When processing of a semiconductor wafer has been completed, lifter pins, driven by solenoids or pistons, are provided within the chuck to remove the wafer. However, if the electrostatic force has not been completely dissipated, the pins may have to push very hard against the wafer to dislodge it. When this occurs, the wafer may be violently displaced from the chuck, resulting in misplacement of the wafer, or even damage. A system and method are disclosed herein for completely neutralizing the electrostatic charge before removal of the wafer is attempted. Neutralization is detected as the point at which the electrostatic force opposing the lifting mechanism reaches a minimum.

System and method for optimizing the electrostatic removal of a workpiece from a chuck

A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.

Method to use a laser to perform the edge clean operation on a semiconductor wafer

Application of an extremely low K material by the application of a laminate onto a wafer. The laminate preferably contains alternating layers of low K material and etch stop layers, and could be applied by rolling the laminate onto the wafer. An anneal process can be utilized to bond the film to the wafer. Conventional photo masking and etching techniques are then used to open vias and line areas in the film, and to deposit the next copper layer on the wafer. Electro polishing can be used to planarize or remove residual copper. Thereafter, an etch step can be performed to remove the excess material between the copper lines to leave an ultra low K region between the copper lines. The next layer of low K film can then be deposited, and the process repeated for all subsequent metal layering.

Laminate low K film

An integrated circuit package comprises a cavity for housing an integrated circuit (IC) and an antenna provided as part of the package that is located substantially outside the cavity. The antenna may be located on the floor of the IC package that lies in the region outside of the IC cavity. Alternatively, the antenna may be located on the upper or lower surface of the lid sealing the IC package. The antenna may be placed in the floor or on a surface of the IC lid by forming depressions in the floor or lid surface and depositing conductive material in the depressions. The conductive material deposition may be by sputtering, evaporation, or other known physical or chemical deposition method. Antennas formed in the upper surface of an IC lid may be coupled to a pin of the IC package so that the antenna may be electrically coupled to a transceiver component on the IC within the package. Antennas formed in the lower surface of an IC lid or the floor of the IC package may be coupled by a conductive pin to a component pad of the IC within the package. To reduce electromagnetic noise that may be induced by the radio frequency signals emitted or received by an antenna, a grounding plane may be provided as part of the IC package. The grounding plane may be coupled to an electrical ground reference point through an IC package pin or the IC within the package.

System and method for using film deposition techniques to provide an antenna within an integrated circuit package

A plasma edge cleaning apparatus is configured to remove film deposits from a wafer edge. A gas distribution manifold is annular shaped and positioned to provide plasma process gases near the edge of the wafer. A top insulator and a wafer support each include a magnetic coil to generate a magnetic field for shielding the selected portions of a wafer from the generated plasma. The top insulator is positioned above the wafer during edge processing so as to form a small gap between the top insulator and the wafer to prevent plasma from etching active die areas of the wafer.

Method and apparatus for cleaning deposited films from the edge of a wafer

A novel semiconductor fabrication chamber includes a quartz vessel and a metal vessel with a resilient sealing member disposed between the quartz and metal vessels to define a vacuum chamber, along with a cooling assembly mounted on a quartz flange extending around the perimeter of the quartz vessel. A liquid or gaseous cooling medium is passed through the cooling assembly to reduce the operating temperature of a portion of the resilient sealing member in contact with the quartz flange during semiconductor fabrication processing so as to extend the useful life of the sealing member. The cooling assembly is secured to the quartz flange using a plurality of clamping fixtures for easy installation and retrofitting.

Growing community of inventors

Gresham, OR, United States of America

Rennie G Barber