Cabot Microelectronics Corporation

Renjie Zhou

Steven Grumbine

Vlasta A Brusic

Isaac K Cherian

Christopher Thompson

Phillip W Carter

Zhan Chen

Shumin Wang

Kevin J Moeggenborg

Yuchun Wang

Vlasta Brusic Kaufman

Paul M Feeney

John C Parker

Jian Zhang

Robert Vacassy

Bin Lu

Jason Aggio

Francesco M De Rege

Issac K Cherian

John Parker

Isaac Cherian

The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

Compositions for polishing aluminum/copper and titanium in damascene structures

An aqueous chemical-mechanical polishing composition for polishing metal containing substrates comprising an abrasive particle consisting essentially of a primary particle modified with an aluminosilicate layer, and wherein the abrasive particle has a zeta potential measured at pH 2.3 of about &#x2212;5 mV to about &#x2212;100 mV. The composition can be used to polish the surface of a tungsten containing substrate.

CMP method for metal-containing substrates

The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives).

Oxidation-stabilized CMP compositions and methods

The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % &#x3b1;-alumina particles, wherein the &#x3b1;-alumina particles have an average diameter of 200 nm or less, and 80% of the &#x3b1;-alumina particles have a diameter of about 500 nm or less, an organic acid, a corrosion inhibitor, and water. Another composition comprises &#x3b1;-alumina particles, an organic acid, dual corrosion inhibitors of triazole and benzotriazole, wherein the wt. % ratio of the triazole to benzotriazole is about 0.1 to about 4.8, and water.

Composition and method for planarizing surfaces

The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.

The invention provides a cyanide-free chemical-mechanical polishing (CMP) composition useful for polishing a gold-containing surface of a substrate. The CMP composition comprises an abrasive, a gold-oxidizing agent, a cyanide-free gold-solubilizing agent, and an aqueous carrier therefor. The invention further provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with the aforementioned polishing composition.

Gold CMP composition and method

The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the polishing system.

Polymeric inhibitors for enhanced planarization

The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.

CMP of copper/ruthenium substrates

The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.

Boron-containing polishing system and method

The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitriles, nitros, thiols thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.

Method of polishing a multi-layer substrate

The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP systems each comprise an abrasive and/or polishing pad, a liquid carrier, and optionally one or more polishing additives. In a first embodiment, the polishing additives are selected from the group consisting of diketones, diketonates, heterocyclic nitrogen-containing compounds, heterocyclic oxygen-containing compounds, heterocyclic phosphorus-containing compounds, urea compounds, nitrogen-containing compounds that can be zwitterionic compounds, salts thereof, and combinations thereof. In a second embodiment, the polishing additive is a metal compound with two or more oxidation states and is used in conjunction with a peroxy-type oxidizer. In a third embodiment, the CMP system comprises &agr;-alumina and fumed alumina, wherein the weight ratio of &agr;-alumina to fumed alumina is about 0.6:1 to about 9:1.

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Aurora, IL, United States of America

Renjie Zhou