Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Alcatel Lucent

René Escoffier

Julien Buckley

Ivan-Christophe Robin

Hubert Bono

Guillaume Savelli

Matthew Charles

Guy Feuillet

Blend Mohamad

Erwan Morvan

Jesus Zuniga Perez

Thierry Bouchet

Blandine Alloing

Roy Dagher

Marc Plissonnier

An electronic device including semiconductor region located on a gallium nitride layer, two electrodes, located on either side of and insulated from the semiconductor region, the electrodes partially penetrating into the gallium nitride layer, and two lateral MOS transistors formed inside and on top of the semiconductor region.

Electronic device comprising transistors

A transistor comprising a gallium nitride layer having a first gate electrode partially penetrating into it, having: a first side coated with a first thickness of a first insulating material and of a second insulating material; and with a second thickness of a conductive material; and a bottom coated with a third thickness, smaller than the first thickness, of the first insulating material.

Transistor

A device including a first transistor, having a gate region partially penetrating into a gallium nitride layer, and a second transistor located inside of the gate region of the first transistor.

A circuit, intended to be associated in series with a load to be powered including a first field-effect transistor; at least one second field-effect transistor, associated in parallel with the first transistor; and at least one sensor of information representative of a current transmitted to said load, the gate of the second transistor being coupled to an output of the sensor.

Transistor association

A field effect transistor includes a substrate; a semiconductor structure formed on a main face of the substrate, the semiconductor structure including a channel area; a first electrode and a second electrode between which extends the channel area, the first electrode including a plurality of portions spaced apart from each other, each portion of the first electrode contributing to forming an elementary transistor referred to as island; connection tracks for electrically connecting the portions of the first electrode to one another; and in which each portion of the first electrode is connected to a connection track through a fuse area, each fuse area associated with the portion of the first electrode of an island being capable of being broken in such a way as to electrically insulate said island if it is defective.

Field effect transistor and associated manufacturing method

An optoelectronic device including a light emitting component and a field-effect transistor, the optoelectronic device including a first semiconductor layer made of a III-V or II-VI compound doped a first conductivity type; an active layer of the light-emitting component; and a second semiconductor layer made of the III-V or III-VI compound doped a second conductivity type opposite the first type, the active layer being sandwiched between the first and second semiconductor layers, wherein the channel of the field-effect transistor is located in the first semiconductor layer, the first semiconductor layer being uninterrupted between the field-effect transistor and the lightemitting component.

Growing community of inventors

Grenoble, France

René Escoffier