Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Alcatel Lucent

René Escoffier

Julien Buckley

Blend Mohamad

Ivan-Christophe Robin

Hubert Bono

Guillaume Savelli

Matthew Charles

Guy Feuillet

Erwan Morvan

Jesus Zuniga Perez

Thierry Bouchet

Blandine Alloing

Roy Dagher

Marc Plissonnier

Charlotte Bryan

A transistor comprising a gallium nitride layer having a first gate electrode partially penetrating into it, having: a first side coated with a first thickness of a first insulating material and of a second insulating material; and with a second thickness of a conductive material; and a bottom coated with a third thickness, smaller than the first thickness, of the first insulating material.

Transistor

A device including a first transistor, having a gate region partially penetrating into a gallium nitride layer, and a second transistor located inside of the gate region of the first transistor.

A circuit, intended to be associated in series with a load to be powered including a first field-effect transistor; at least one second field-effect transistor, associated in parallel with the first transistor; and at least one sensor of information representative of a current transmitted to said load, the gate of the second transistor being coupled to an output of the sensor.

Transistor association

A field effect transistor includes a substrate; a semiconductor structure formed on a main face of the substrate, the semiconductor structure including a channel area; a first electrode and a second electrode between which extends the channel area, the first electrode including a plurality of portions spaced apart from each other, each portion of the first electrode contributing to forming an elementary transistor referred to as island; connection tracks for electrically connecting the portions of the first electrode to one another; and in which each portion of the first electrode is connected to a connection track through a fuse area, each fuse area associated with the portion of the first electrode of an island being capable of being broken in such a way as to electrically insulate said island if it is defective.

Field effect transistor and associated manufacturing method

An optoelectronic device including a light emitting component and a field-effect transistor, the optoelectronic device including a first semiconductor layer made of a III-V or II-VI compound doped a first conductivity type; an active layer of the light-emitting component; and a second semiconductor layer made of the III-V or III-VI compound doped a second conductivity type opposite the first type, the active layer being sandwiched between the first and second semiconductor layers, wherein the channel of the field-effect transistor is located in the first semiconductor layer, the first semiconductor layer being uninterrupted between the field-effect transistor and the lightemitting component.

Optoelectronic device comprising a light-emitting component and a transistor

Growing community of inventors

Grenoble, France

René Escoffier