Battelle Energy Alliance, LLC

Idaho State University

Rene Rodriguez

Joshua J Pak

Robert Vincent Fox

Chivin Sun

Andrew W Holland

Kelsey R Margulieux

Lisa Lau

Fengyan Zhang

Joseph S Gardner

John Kalivas

Ikwulono David Unobe

Endrit Shurdha

Methods for identifying marks in a defaced metal surface by use of computer-implemented processing of images obtained according to a thermal lock-in imaging technique are described. Methods include processing phase images and/or amplitude images according to principal component analysis of a concatenated input matrix and development of a score image for each principal component determined by the analysis. Score images or extracted features of score images (e.g., Zernike moments) are compared to images/features in a reference data library and based upon the comparison, the defaced mark can be identified.

Restoration of defaced markings using lock-in infrared thermography

Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VImaterial. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VImaterial. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

Methods for forming particles

Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula &#xbd;{LN(&#x3bc;-X)M'X}, and reacting MER with the intermediate products to form SSPs of the formula LN(&#x3bc;-ER)M&#x2032;(ER), wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M&#x2032; is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HEREH and MER with one or more substances having the empirical formula LN(&#x3bc;-ER)M&#x2032;(ER)or LN(&#x3bc;-X)M&#x2032;(X)to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors formed by such methods

Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.

Hybrid particles and associated methods

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Methods of forming semiconductor devices and devices formed using such methods

Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods

Methods for forming particles from single source precursors

CuInSnanoparticles have been prepared from single source precursors via microwave irradiation. Also, CuInGaSalloy nanoparticles have been prepared. Microwave irradiation methods have allowed an increase in the efficiency of preparation of these materials by providing increased uniformity of heating and shorter reaction times. Nanoparticle growth has been controlled in the about 1 to 5 nm size range by variation of thiolated capping ligand concentrations as well as reaction temperatures and times. Investigation of the photophysical properties of the colloidal nanoparticles has been performed using electronic absorption and luminescence emission spectroscopy. Qualitative nanoparticles sizes have been determined from the photoluminescence (PL) data and compared to TEM images.

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Pocatello, ID, United States of America

Rene Rodriguez