Infineon Technologies Austria Ag

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Armin Willmeroth

Bjoern Fischer

Giulio Fragiacomo

Ralf Otremba

Uwe Wahl

Uwe Kirchner

Andreas Schloegl

Ernst Katzmaier

Ulrich Froehler

Felix Grawert

A power converter circuit includes an inductor and rectifier circuit having an inductor connected in series with an electronic switch, and a rectifier circuit, and a controller for generating a drive signal for driving the electronic switch. The electronic switch has drain, source and gate nodes, drift and compensation cells each including a drift region of a first doping type and a compensation region of a second doping type, and a control structure connected between the drift region of each of the drift and compensation cells and the source node. Each drift region is coupled to the drain node and each compensation region cells is coupled to the source node. A first type doping concentration Nof the drift region is higher than a first doping level L, and a second type doping concentration Nof the compensation region is higher than a second doping level L.

Power converter circuit having a controller for generating a drive signal for driving an electronic switch with high avalanche robustness

A transistor device includes drain, source and gate nodes, a plurality of drift and compensation cells each including a drift region of a first doping type and a compensation region of a second doping type complementary to the first doping type, and a control structure connected between the drift region of each of the drift and compensation cells and the source node. Each drift region is coupled to the drain node and each compensation region cells is coupled to the source node. A first type doping concentration Nof the drift region is higher than a first doping level L, and a second type doping concentration Nof the compensation region is higher than a second doping level L.

Transistor device with high avalanche robustness

Various embodiments provide an electronic device, wherein the electronic device comprises a mounting surface configured to mount the electronic device to an external structure and having a first size; a backside electrode having a second size and having arranged thereon a die electrically connected to the backside electrode; wherein the first size is at least three times the second size.

Electronic device and method of manufacturing the same

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Riegersdorf, Austria

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