Palo Alto Research Center Inc.

Xerox Corporation

Rene A Lujan

William S Wong

Scott J Limb

Christopher L Chua

Ping Mei

Gregory Lewis Whiting

Michael G Hack

Eugene Michael Chow

James B Boyce

Qian Wang

Michael L Chabinyc

Sean Roark Garner

Sylvia Joan Smullin

Beverly Russo

David Eric Schwartz

Jengping Lu

Ana Claudia Arias

Sanjiv Sambandan

Yunda Wang

Robert Anthony Street

Jeng Ping Lu

Babur B Hadimioglu

Tse Nga Ng

Richard L Weisfield

Jackson H Ho

Julia Rosolovsky Greer

Richard I Johnson

Chinwen Shih

Charles T Malone

A transient electronic device includes electronic elements (e.g., an SOI- or chip-based IC) and a trigger mechanism disposed on a frangible glass substrate. The trigger mechanism includes a switch that initiates a large trigger current through a self-limiting resistive element in response to a received trigger signal. The self-limiting resistive element includes a resistor portion that generates heat in response to the trigger current, thereby rapidly increasing the temperature of a localized (small) region of the frangible glass substrate, and a current limiting portion (e.g., a fuse) that self-limits (terminates) the trigger current after a predetermined amount of time, causing the localized region to rapidly cool down. The frangible glass substrate is engineered such that a stress profile produced by the rapid heating/cooling of the localized region generates an initial fracture force that subsequently propagates throughout the glass substrate, whereby sufficient potential energy is released to powderize the electronic elements.

Self-limiting electrical triggering for initiating fracture of frangible glass

A self-destructing device includes a stressed substrate with a heater thermally coupled to the stressed substrate. The device includes a power source and trigger circuitry comprising a sensor and a switch. The sensor generates a trigger signal when exposed to a trigger stimulus. The switch couples the power source to the heater in response to the trigger signal When energized by the power source, the heater generates heat sufficient to initiate self-destruction of the stressed substrate.

Method of forming a photodiode

A capacitor device includes a plurality of capacitors arranged into a shape. Each capacitor of the plurality of capacitors has a first external electrode on a first side of the capacitor and a second external electrode on a second side of the capacitor opposing the first side. A first plate is proximate and electrically coupled to the first external electrodes of the capacitors. A second plate is proximate and electrically coupled to the second external electrodes of the capacitors.

Multilayer capacitor

Sensor and heater for stimulus-initiated fracture of a substrate

An IC assembly includes multiple microelectronic dies embedded in a substrate material using capillary forces such that the contact surface of each microelectronic die is coplanar with a planar upper surface of the substrate material. The substrate material is deposited as a layer of uncured polymer in a paste (or other solid form) on a base chip, and then the microelectronic dies are mounted on the layer surface in a predefined pattern. The uncured polymer is then heated until becomes a flowable liquid, causing the microelectronic dies to be pulled into the liquid polymer by capillary forces until the contact surface of each microelectronic die is coplanar with the upper liquid polymer surface. The liquid polymer is then cured to form the substrate material as a cross-linked robust solid film that fixedly secures the microelectronic dies in the predefined pattern. The microelectronic dies are then interconnected using standard metallization techniques.

Micro-assembly with planarized embedded microelectronic dies

Charge-encoded chiplets are produced using a sacrificial metal mask and associated fabrication techniques and materials that are compatible with typical semiconductor fabrication processes to provide each chiplet with two different (i.e., positive and negative) charge polarity regions generated by associated patterned charge-inducing material structures. A first charge-inducing material having a positive charge polarity is formed on a silicon wafer over previously-fabricated integrated circuits, then a sacrificial metal mask is patterned only over a portion of the charge-inducing material structure, and a second charge-inducing material structure (e.g., a self-assembling octadecyltrichlorosilane monolayer) is deposited having a negative charge polarity. The sacrificial metal mask is then removed to expose the masked portion of the first charge-inducing material structure, thereby providing the chiplet with both a positive charge polarity region and a negative charge polarity region.

Fabrication method for microelectronic components and microchip inks used in electrostatic assembly

A ultra-violet sensor has a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor. A memory device has an array of ultra-violet sensors, each sensor having a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor, an array of ultra-violet light sources corresponding to the array of ultra-violet sensors, an array of detectors electrically coupled to the array of ultra-violet sensors, driving circuitry attached to the array of sensors and the ultra-violet light sources to allow addressing of the arrays, and a reset mechanism.

UV sensor with nonvolatile memory using oxide semiconductor films

A method of forming a thin-film layered electronic device over a flexible substrate comprises the steps of depositing a buffer layer over the flexible substrate, heating the substrate and buffer layer stack to a temperature at which plastic deformation of the buffer layer takes place, cooling the stack, then forming the thin-film electronic device over the plastically deformed buffer layer without further plastic deformation of the buffer layer. The heating and cooling to cause plastic deformation of the buffer layer is referred to as annealing. The thin-film electronic device is formed by a process according to which all steps are performed at a temperature below that at which further plastic deformation of the buffer layer occurs. In-process strain and runout are reduced, improving device yield on flexible substrates. An optional metal base layer may be formed over the buffer layer prior annealing.

Annealing a buffer layer for fabricating electronic devices on compliant substrates

A method of forming a sensor array. The method includes depositing a source/drain contact layer; depositing a semiconductor layer on the source/drain contact layer; and patterning the source/drain contact layer and the semiconductor layer substantially simultaneously, wherein the patterned semiconductor layer forms part of a sensor of the sensor array.

Structure and method for flexible sensor array

A photosensor structure includes a pixel metal layer disposed in physical and electrical contact with a pixel thin film transistor and a lower sensor layer of a p-i-n photosensor. The pixel metal layer extends laterally to an extent less that the lower sensor layer such that an overhang region is defined below the lower sensor layer and the adjacent the lateral edge of the pixel metal layer. When the relatively thick intrinsic sensor layer is formed over the lower sensor layer, it attaches to the upper surface and, due to the presence of the overhang region, the lateral edge of the lower sensor layer, forming a discrete intrinsic sensor layer structure over the pixel which is physically isolated from adjacent corresponding structures. This isolation allows for thermal expansion and contraction during formation of the intrinsic sensor layer without cracking the intrinsic sensor layer structure.

Isolated sensor structures such as for flexible substrates

A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal layer is then etched using the first print-patterned mask to form source and drain electrodes. A semiconductive layer and an insulative layer are formed thereover. A layer of photosensitive material is then deposited and exposed through the substrate, with the source and drain electrodes acting as masks for the exposure. Following development of the photosensitive material, a gate metal layer is deposited. A second print-patterned mask is then formed over the device, again by digital lithography. Etching and removal of the photosensitive material leaves the self-aligned top-gate electrode.

Pattern-print thin-film transistors with top gate geometry

Growing community of inventors

Sunnyvale, CA, United States of America

Rene A Lujan