Stmicroelectronics International N.v.

Stmicroelectronics France

Renaud Lemoine

Samia Ouyahia

Eric Wilhelm

Christophe Boyavalle

According to an embodiment, An integrated circuit comprising a first cascode radio frequency (RF) power amplifier that includes a first common source transistor having a gate configured to receive a first RF signal, and a source connected to a neutral point; a first common gate transistor having a gate and a drain connected to a power source node, and a source connected to a drain of the first common source transistor; and a first resistor coupled between a bulk of the first common gate transistor and a first bulk bias node configured to provide a voltage that is greater than or equal to a voltage at the source of the first common gate transistor, wherein the first resistor is configured to obtain a floating point.

Radio frequency power amplifier

According to one aspect, an integrated circuit having a radio frequency amplifier includes at least two amplifier stages and an impedance matching device between two amplifier stages of the radio frequency amplifier. The matching device includes two lines which are coupled by electromagnetic induction. The first line is connected to an output of the first amplifier stage and the second line is connected to an input of the second amplifier stage.

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Champigny sur Marne, France

Renaud Lemoine