Agile Power Switch 3d-integration Apsi3d

Irt Antoine De Saint Exupery

Institut Catholique D'arts Et Metiers (icam)

Renaud André Lacabanne

Jean-Michel Francis Reynes

Jacques Pierre Henri Favre

Jean-Pierre Bernard Marie Fradin

Claudia Cadile

Some embodiments are directed to a semiconductor power device and a method of assembling such a device is provided. The semiconductor power device includes a first substrate, a second substrate and an interconnect structure. The first substrate includes a switching semiconductor element, a first electrically conductive layer(s) and a first receiving element. The second substrate includes a second receiving element and a second electrically conductive layer(s). The interconnect structure provides an electrical connection between the first electrically conductive layer and the second electrically conductive layer. The interconnect structure further includes a plurality of interconnect elements of an electrical conductive material. At least one of the plurality of interconnect elements is an alignment interconnect element. The alignment interconnect element is partially received by the first receiving element and is partially received by the second receiving element for aligning a relative position of the first substrate with respect to the second substrate.

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Tarbes, France

Renaud André Lacabanne